Doping and carrier transport in Ga1−3xIn3xNxAs1−x alloys

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • Tampere University of Technology

Kuvaus

Si- and Be-doped Ga1−3xIn3xNxAs1−x(0<~x<~3%) layers are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source. The carrier concentration and mobility are observed to decrease substantially with increasing nitrogen content in both p- and n-type GaInNAs films. After rapid thermal annealing at 750 °C, the Be dopants are almost fully activated in p-type material; yet only a small fraction of the Si dopants are activated in n-type GaInNAs films. At low temperature a broad photoluminescence band centered at 1.041 eV (about 120 meV below the band gap) is observed in n-type GaInNAs, which suggests the possible compensating centers present in Si-doped GaInNAs.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli113308
Sivut1-3
Sivumäärä3
JulkaisuPhysical Review B
Vuosikerta64
Numero11
TilaJulkaistu - 29 elokuuta 2001
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

    Tutkimusalat

  • GaInNAs alloys, transport properties

ID: 4146774