Domain Wall Coupling in Ferromagnetic/Ferroelectric Heterostructures: Scaling Behaviour and Electric Field Driven Motion

Physics

• Domain Wall 100%
• Ferroelectricity 100%
• Electric Fields 100%
• Domains 50%
• Magnetic Domain 50%
• Thin Films 37%
• Plane 37%
• Substrates 25%
• Width 25%
• Magnetic Fields 25%
• Ferromagnetism 25%
• Room Temperature 12%
• Physical Phenomena 12%
• Simulation 12%
• Symmetry 12%
• Transferring 12%
• Independent Variables 12%
• Parameter 12%
• Scanning Electron Microscopy 12%
• Spin 12%
• Electron Beams 12%
• Anisotropy 12%
• Microscopy 12%
• Magnetic Properties 12%
• Memory 12%
• Boundaries 12%
• Dimensions 12%
• Chirality 12%
• Molecular Beam Epitaxy 12%
• Evaporation 12%
• Ferroelectricity 12%
• Magnetron Sputtering 12%
• Kerr Effect 12%
• Magnetostriction 12%
• Ferromagnetic Material 12%

Material Science

• Heterojunction 100%
• Domain Wall 100%
• Ferroelectric Material 100%
• Material 50%
• Devices 37%
• Thin Films 37%
• Strain 25%
• Multiferroic Material 25%
• Temperature 12%
• Sensor 12%
• Molecular Beam Epitaxy 12%
• Density 12%
• Scanning Electron Microscopy 12%
• Anisotropy 12%
• Magnetic Property 12%
• Microscopy 12%
• Hybrid Material 12%
• Analytical Modeling 12%
• Electrostriction 12%
• Multilayers 12%
• Magnetron Sputtering 12%
• Ferromagnetic Material 12%
• Power Device 12%
• Chirality 12%