Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering

Nabil Khelifati, Hannu S. Laine, Ville Vähänissi, Hele Savin, Fatima Zohra Bouamama, Djoudi Bouhafs

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

Abstrakti

This paper reports the results of a systematic study on the kinetics of dissociation and formation of iron-boron (FeB) pairs in boron-doped Czochralski silicon after phosphorus implantation gettering of iron at different temperatures. The aim of this study is threefold: (i) investigation of the dissociation kinetics of the FeB pairs by a standardized illumination as a function of the iron concentration after gettering process (ii) study of the kinetics of their association, and (iii) extraction of the characteristic parameters of these two phenomena for gettered samples, in particular the effective time constants of dissociation and association as well as the constant of material, which describes the dissociation rate well in the absence of other recombination channels. This article is protected by copyright. All rights reserved.
AlkuperäiskieliEnglanti
Artikkeli1900253
Sivumäärä19
JulkaisuPHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE
Vuosikerta216
Numero17
DOI - pysyväislinkit
TilaJulkaistu - syyskuuta 2019
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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