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Disorder- and Interaction-Driven Quantum Criticality in WSe2

  • Nasir Ali*
  • , Fida Ali
  • , Hyungyu Choi
  • , Sobia Waheed
  • , Youqiang Huang
  • , Fedor Nigmatulin
  • , Zhenping Wang
  • , Hyokwang Park
  • , Hoseong Shin
  • , Kwangro Lee
  • , Faisal Ahmed
  • , Boseok Kang
  • , Zhipei Sun*
  • , Won Jong Yoo*
  • *Tämän työn vastaava kirjoittaja
  • Sungkyunkwan University
  • Yale University

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

2 Viittaukset (Web of Science)
5 Lataukset (Pure)

Abstrakti

Quantum fluctuations resulting from strong Coulomb interactions or strong disorders lead to quantum phase transitions (QPTs) in 2D materials. However, understanding of disorder- and interaction-driven QPTs remains a fundamental challenge in 2D materials owing to the presence of strong disorder and strong Coulomb interactions. Here, we study the systematic interplay of strong disorder and strong Coulomb interactions by controlling the thickness of WSe2 to elucidate the disorder- and interaction-driven metal-insulator QPTs. An observation of metal-insulator transitions (MITs) with a conductivity of ∼e2/h in thin-WSe2 agrees with the Mott-Ioffe-Regel limit, excluding bad-metal behavior; conversely, MITs with a conductivity of <e2/h demonstrate the bad-metal behavior in thick-WSe2. We observe the distinct temperature dependences of resistivity, which unveil anomalous metallic transport in WSe2. Furthermore, the emergence of the metallic glass phase (MGP) in thin-WSe2 underscores the significant role of strong disorder and strong Coulomb interactions. Contrarily, the absence of the MGP in thick-WSe2 suggests that the Coulomb interactions dominate over the disorder. Finally, the successful scaling collapse of conductivity reveals the disorder-dominated quantum criticality in thin-WSe2 and interaction-driven Mott quantum criticality in thick-WSe2. This study provides compelling evidence that thickness-dependent WSe2 could be an exciting testbed to understand anomalous metallic transport and metal-insulator QPTs in 2D materials.

AlkuperäiskieliEnglanti
Sivut11728-11737
Sivumäärä10
JulkaisuACS Nano
Vuosikerta19
Numero12
DOI - pysyväislinkit
TilaJulkaistu - 20 maalisk. 2025
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Rahoitus

This work was supported by the Basic Science Research Program (RS-2023-00245469, RS-2024-00346656), funded by the National Research Foundation of Korea (NRF), and the Standardization Research Program (20022369) funded by the Ministry of Trade, Industry and Energy of Korea. It was also supported by the Centre of Excellence in Quantum Technology, QTF (133529258 CoE QTF T40311), the Academy of Finland (314810, 333982, 336144, 352780, 352930, and 353364), the European Union EU H2020-MSCA-RISE-872049 (IPN-Bio), the Jane and Aatos Erkko foundation and the Technology Industries of Finland centennial foundation (Future Makers 2022), and ERC (834742).

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