Dislocations in GaAs grown by vapour pressure controlled Czochralski technique

T. Tuomi; L. Knuuttila; J. Riikonen; P. Rudolph; M. Neubert; P.J. McNally; W. Chen; J. Kanatharana

Dislocations in GaAs grown by vapour pressure controlled Czochralski technique

T. Tuomi
, L. Knuuttila
, J. Riikonen
, P. Rudolph
, M. Neubert
, P.J. McNally
, W. Chen
, J. Kanatharana

Tutkimustuotos: Työpaperi › Working paper › Professional

Alkuperäiskieli	Englanti
Julkaisupaikka	Hampuri
Sivut	839-840
Tila	Julkaistu - 2002
OKM-julkaisutyyppi	D4 Julkaistu kehittämis- tai tutkimusraportti taikka -selvitys

Julkaisusarja

Nimi	HASYLAB-DESY Annual Report 2001, Part I

Tutkimusalat

semiconductors
synchrotron x-ray topography

Siteeraa tätä

@techreport{8268e6755fdc40c2b3568d47be001866,

title = "Dislocations in GaAs grown by vapour pressure controlled Czochralski technique",

keywords = "semiconductors, synchrotron x-ray topography, semiconductors, synchrotron x-ray topography, semiconductors, synchrotron x-ray topography",

author = "T. Tuomi and L. Knuuttila and J. Riikonen and P. Rudolph and M. Neubert and P.J. McNally and W. Chen and J. Kanatharana",

year = "2002",

language = "English",

series = "HASYLAB-DESY Annual Report 2001, Part I",

pages = "839--840",

type = "WorkingPaper",

}

TY - UNPB

T1 - Dislocations in GaAs grown by vapour pressure controlled Czochralski technique

AU - Tuomi, T.

AU - Knuuttila, L.

AU - Riikonen, J.

AU - Rudolph, P.

AU - Neubert, M.

AU - McNally, P.J.

AU - Chen, W.

AU - Kanatharana, J.

PY - 2002

Y1 - 2002

KW - semiconductors

KW - synchrotron x-ray topography

KW - semiconductors

KW - synchrotron x-ray topography

KW - semiconductors

KW - synchrotron x-ray topography

M3 - Working paper

T3 - HASYLAB-DESY Annual Report 2001, Part I

SP - 839

EP - 840

BT - Dislocations in GaAs grown by vapour pressure controlled Czochralski technique

CY - Hampuri

ER -