Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films

R. L. Puurunen; T. Suni; O. Ylivaara; H. Kondo; M. Ammar; T. Ishida; H. Fujita; A. Bosseboeuf; S. Zaima; H. Kattelus

doi:10.1109/TRANSDUCERS.2011.5969474

Direct wafer bonding of atomic layer deposited TiO₂ and Al ₂O₃ thin films

R. L. Puurunen^*, T. Suni, O. Ylivaara, H. Kondo, M. Ammar, T. Ishida, H. Fujita, A. Bosseboeuf, S. Zaima, H. Kattelus

^*Tämän työn vastaava kirjoittaja

Ei julkaistu Aalto-yliopiston affiliaatiolla

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference contribution › Scientific › vertaisarvioitu

6 Sitaatiot (Scopus)

Abstrakti

In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO₂ insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO₂, and Al₂O₃ for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.

Alkuperäiskieli	Englanti
Otsikko	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Sivut	978-981
Sivumäärä	4
DOI - pysyväislinkit	https://doi.org/10.1109/TRANSDUCERS.2011.5969474
Tila	Julkaistu - 2011
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisuussa
Tapahtuma	International Conference on Solid-State Sensors, Actuators and Microsystems - Beijing, Kiina Kesto: 5 kesäk. 2011 → 9 kesäk. 2011 Konferenssinumero: 16

Conference

Conference	International Conference on Solid-State Sensors, Actuators and Microsystems
Lyhennettä	TRANSDUCERS
Maa/Alue	Kiina
Kaupunki	Beijing
Ajanjakso	05/06/2011 → 09/06/2011

Pääsy asiakirjaan

10.1109/TRANSDUCERS.2011.5969474

OpenUrl-saatavuus

Koko teksti

Muut tiedostot ja linkit

Link to publication in Scopus

Siteeraa tätä

Puurunen, R. L., Suni, T., Ylivaara, O., Kondo, H., Ammar, M., Ishida, T., Fujita, H., Bosseboeuf, A., Zaima, S., & Kattelus, H. (2011). Direct wafer bonding of atomic layer deposited TiO₂ and Al ₂O₃ thin films. teoksessa 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (Sivut 978-981). [5969474] https://doi.org/10.1109/TRANSDUCERS.2011.5969474

@inproceedings{a6732e41ee6840ee81755c9c123bc78a,

title = "Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films",

abstract = "In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.",

keywords = "AlO, ALD, Atomic layer deposition, silicon-on-insulator, TiO, wafer bonding",

author = "Puurunen, {R. L.} and T. Suni and O. Ylivaara and H. Kondo and M. Ammar and T. Ishida and H. Fujita and A. Bosseboeuf and S. Zaima and H. Kattelus",

year = "2011",

doi = "10.1109/TRANSDUCERS.2011.5969474",

language = "English",

isbn = "9781457701573",

pages = "978--981",

booktitle = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

note = "International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS ; Conference date: 05-06-2011 Through 09-06-2011",

}

Puurunen, RL, Suni, T, Ylivaara, O, Kondo, H, Ammar, M, Ishida, T, Fujita, H, Bosseboeuf, A, Zaima, S & Kattelus, H 2011, Direct wafer bonding of atomic layer deposited TiO₂ and Al ₂O₃ thin films. julkaisussa 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969474, Sivut 978-981, International Conference on Solid-State Sensors, Actuators and Microsystems, Beijing, Kiina, 05/06/2011. https://doi.org/10.1109/TRANSDUCERS.2011.5969474

TY - GEN

T1 - Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films

AU - Puurunen, R. L.

AU - Suni, T.

AU - Ylivaara, O.

AU - Kondo, H.

AU - Ammar, M.

AU - Ishida, T.

AU - Fujita, H.

AU - Bosseboeuf, A.

AU - Zaima, S.

AU - Kattelus, H.

N1 - Conference code: 16

PY - 2011

Y1 - 2011

N2 - In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.

AB - In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.

KW - AlO

KW - ALD

KW - Atomic layer deposition

KW - silicon-on-insulator

KW - TiO

KW - wafer bonding

UR - http://www.scopus.com/inward/record.url?scp=80052113494&partnerID=8YFLogxK

U2 - 10.1109/TRANSDUCERS.2011.5969474

DO - 10.1109/TRANSDUCERS.2011.5969474

M3 - Conference contribution

AN - SCOPUS:80052113494

SN - 9781457701573

SP - 978

EP - 981

BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

T2 - International Conference on Solid-State Sensors, Actuators and Microsystems

Y2 - 5 June 2011 through 9 June 2011

ER -