Design of an E-band Doherty Power amplifier

Md Najmussadat; Raju Ahamed; Dristy Parveg; Mikko Varonen; Kari A.I. Halonen

doi:10.1109/PRIME.2018.8430350

Design of an E-band Doherty Power amplifier

Md Najmussadat, Raju Ahamed, Dristy Parveg, Mikko Varonen, Kari A.I. Halonen

VTT Technical Research Centre of Finland Ltd.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference contribution › Scientific › vertaisarvioitu

3 Sitaatiot (Scopus)

Abstrakti

This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

Alkuperäiskieli	Englanti
Otsikko	PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics
Kustantaja	IEEE
Sivut	145-148
Sivumäärä	4
ISBN (painettu)	9781538653869
DOI - pysyväislinkit	https://doi.org/10.1109/PRIME.2018.8430350
Tila	Julkaistu - 8 elok. 2018
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisuussa
Tapahtuma	Conference on Ph.D. Research in Microelectronics and Electronics - Prague, Tshekki Kesto: 2 heinäk. 2018 → 5 heinäk. 2018 Konferenssinumero: 14

Conference

Conference	Conference on Ph.D. Research in Microelectronics and Electronics
Lyhennettä	PRIME
Maa/Alue	Tshekki
Kaupunki	Prague
Ajanjakso	02/07/2018 → 05/07/2018

Pääsy asiakirjaan

10.1109/PRIME.2018.8430350

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Link to publication in Scopus

5WAVE: Millimetre-wave front-ends for 5G wireless backhaul and access networks
Karaca, D., Parveg, D., Halonen, K., Varonen, M., Ahamed, R., Najmussadat, M. & Tawfik, Y.
01/01/2016 → 31/03/2019
Projekti: Business Finland: Other research funding

Aalto Electronics-ICT
Jussi Ryynänen (Manager)
Elektroniikan ja nanotekniikan laitos
Laitteistot/tilat: Facility

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@inproceedings{ffaf38c0a53a493185e9891fa34c8c3f,

title = "Design of an E-band Doherty Power amplifier",

abstract = "This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.",

keywords = "BiCMOS, Doherty Power Amplifier, Microstrip, Power Backoff, SiGe",

author = "Md Najmussadat and Raju Ahamed and Dristy Parveg and Mikko Varonen and Halonen, {Kari A.I.}",

year = "2018",

month = aug,

day = "8",

doi = "10.1109/PRIME.2018.8430350",

language = "English",

isbn = "9781538653869",

pages = "145--148",

booktitle = "PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics",

publisher = "IEEE",

address = "United States",

note = "Conference on Ph.D. Research in Microelectronics and Electronics, PRIME ; Conference date: 02-07-2018 Through 05-07-2018",

}

Najmussadat, M , Ahamed, R, Parveg, D, Varonen, M & Halonen, KAI 2018, Design of an E-band Doherty Power amplifier. julkaisussa PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics., 8430350, IEEE, Sivut 145-148, Conference on Ph.D. Research in Microelectronics and Electronics, Prague, Tshekki, 02/07/2018. https://doi.org/10.1109/PRIME.2018.8430350

TY - GEN

T1 - Design of an E-band Doherty Power amplifier

AU - Najmussadat, Md

AU - Ahamed, Raju

AU - Parveg, Dristy

AU - Varonen, Mikko

AU - Halonen, Kari A.I.

N1 - Conference code: 14

PY - 2018/8/8

Y1 - 2018/8/8

N2 - This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

AB - This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

KW - BiCMOS

KW - Doherty Power Amplifier

KW - Microstrip

KW - Power Backoff

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=85052510817&partnerID=8YFLogxK

U2 - 10.1109/PRIME.2018.8430350

DO - 10.1109/PRIME.2018.8430350

M3 - Conference contribution

AN - SCOPUS:85052510817

SN - 9781538653869

SP - 145

EP - 148

BT - PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics

PB - IEEE

T2 - Conference on Ph.D. Research in Microelectronics and Electronics

Y2 - 2 July 2018 through 5 July 2018

ER -

Design of an E-band Doherty Power amplifier

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Conference

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Projektit

5WAVE: Millimetre-wave front-ends for 5G wireless backhaul and access networks

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Aalto Electronics-ICT

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