Design of a D-Band CMOS Amplifier Utilizing Coupled Slow-Wave Coplanar Waveguides

Dristy Parveg; Mikko Varonen; Denizhan Karaca; Ali Vahdati; Mikko Kantanen; Kari A.I. Halonen

doi:10.1109/TMTT.2017.2777976

Design of a D-Band CMOS Amplifier Utilizing Coupled Slow-Wave Coplanar Waveguides

Dristy Parveg, Mikko Varonen, Denizhan Karaca, Ali Vahdati, Mikko Kantanen, Kari A.I. Halonen

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

32 Sitaatiot (Scopus)

Abstrakti

This paper validates a design and modeling methodology of coupled slow-wave waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that utilizes the CS-CPW for impedance matching. The robustness and feasibility of using the CS-CPW as a matching element in wideband millimeter-wave (mm-wave) silicon circuit designs are studied. Furthermore, the key design details of a mm-wave LNA are discussed. The designed monolithic microwave integrated circuit amplifier has a gain greater than 10 dB from 135 to 170 GHz with a peak gain of 15.7 dB at 160 GHz. The amplifier has a measured noise figure of 8.5 dB from 135 to 170 GHz, and an output-referred 1-dB compression point of -16.5 dBm at 160 GHz. The total power consumption of the amplifier is 32 mW.

Alkuperäiskieli	Englanti
Sivut	1359 - 1373
Sivumäärä	15
Julkaisu	IEEE Transactions on Microwave Theory and Techniques
Vuosikerta	66
Numero	3
Varhainen verkossa julkaisun päivämäärä	14 jouluk. 2017
DOI - pysyväislinkit	https://doi.org/10.1109/TMTT.2017.2777976
Tila	Julkaistu - 2018
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

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10.1109/TMTT.2017.2777976

https://cris.vtt.fi/en/publications/design-of-a-d-band-cmos-amplifier-utilizing-coupled-slow-wave-cop

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title = "Design of a D-Band CMOS Amplifier Utilizing Coupled Slow-Wave Coplanar Waveguides",

abstract = "This paper validates a design and modeling methodology of coupled slow-wave waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that utilizes the CS-CPW for impedance matching. The robustness and feasibility of using the CS-CPW as a matching element in wideband millimeter-wave (mm-wave) silicon circuit designs are studied. Furthermore, the key design details of a mm-wave LNA are discussed. The designed monolithic microwave integrated circuit amplifier has a gain greater than 10 dB from 135 to 170 GHz with a peak gain of 15.7 dB at 160 GHz. The amplifier has a measured noise figure of 8.5 dB from 135 to 170 GHz, and an output-referred 1-dB compression point of -16.5 dBm at 160 GHz. The total power consumption of the amplifier is 32 mW.",

keywords = "140 GHz, 170 GHz, Amplifier, CMOS, CMOS technology, Coplanar waveguides, coupled slow-wave coplanar waveguide (CS-CPW), coupled transmission lines, D-band, Impedance, low-noise amplifier (LNA), Metals, millimeter wave integrated circuit, monolithic microwave integrated circuit (MMIC), Silicon, silicon, slow-wave coplanar waveguide (S-CPW), slow-wave coupled line, Strips, Substrates",

author = "Dristy Parveg and Mikko Varonen and Denizhan Karaca and Ali Vahdati and Mikko Kantanen and Halonen, {Kari A.I.}",

year = "2018",

doi = "10.1109/TMTT.2017.2777976",

language = "English",

volume = "66",

pages = "1359 -- 1373",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "IEEE",

number = "3",

}

TY - JOUR

T1 - Design of a D-Band CMOS Amplifier Utilizing Coupled Slow-Wave Coplanar Waveguides

AU - Parveg, Dristy

AU - Varonen, Mikko

AU - Karaca, Denizhan

AU - Vahdati, Ali

AU - Kantanen, Mikko

AU - Halonen, Kari A.I.

PY - 2018

Y1 - 2018

N2 - This paper validates a design and modeling methodology of coupled slow-wave waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that utilizes the CS-CPW for impedance matching. The robustness and feasibility of using the CS-CPW as a matching element in wideband millimeter-wave (mm-wave) silicon circuit designs are studied. Furthermore, the key design details of a mm-wave LNA are discussed. The designed monolithic microwave integrated circuit amplifier has a gain greater than 10 dB from 135 to 170 GHz with a peak gain of 15.7 dB at 160 GHz. The amplifier has a measured noise figure of 8.5 dB from 135 to 170 GHz, and an output-referred 1-dB compression point of -16.5 dBm at 160 GHz. The total power consumption of the amplifier is 32 mW.

AB - This paper validates a design and modeling methodology of coupled slow-wave waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that utilizes the CS-CPW for impedance matching. The robustness and feasibility of using the CS-CPW as a matching element in wideband millimeter-wave (mm-wave) silicon circuit designs are studied. Furthermore, the key design details of a mm-wave LNA are discussed. The designed monolithic microwave integrated circuit amplifier has a gain greater than 10 dB from 135 to 170 GHz with a peak gain of 15.7 dB at 160 GHz. The amplifier has a measured noise figure of 8.5 dB from 135 to 170 GHz, and an output-referred 1-dB compression point of -16.5 dBm at 160 GHz. The total power consumption of the amplifier is 32 mW.

KW - 140 GHz

KW - 170 GHz

KW - Amplifier

KW - CMOS

KW - CMOS technology

KW - Coplanar waveguides

KW - coupled slow-wave coplanar waveguide (CS-CPW)

KW - coupled transmission lines

KW - D-band

KW - Impedance

KW - low-noise amplifier (LNA)

KW - Metals

KW - millimeter wave integrated circuit

KW - monolithic microwave integrated circuit (MMIC)

KW - Silicon

KW - silicon

KW - slow-wave coplanar waveguide (S-CPW)

KW - slow-wave coupled line

KW - Strips

KW - Substrates

UR - http://www.scopus.com/inward/record.url?scp=85039769826&partnerID=8YFLogxK

U2 - 10.1109/TMTT.2017.2777976

DO - 10.1109/TMTT.2017.2777976

M3 - Article

AN - SCOPUS:85039769826

VL - 66

SP - 1359

EP - 1373

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 3

ER -

Design of a D-Band CMOS Amplifier Utilizing Coupled Slow-Wave Coplanar Waveguides

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