Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology

Md Najmussadat; Raju Ahamed; Mikko Varonen; Dristy Parveg; Yehia Tawfik; Kari A.I. Halonen

Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology

Md Najmussadat, Raju Ahamed, Mikko Varonen, Dristy Parveg, Yehia Tawfik, Kari A.I. Halonen

VTT Technical Research Centre of Finland Ltd.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference contribution › Scientific › vertaisarvioitu

5 Sitaatiot (Scopus)

117 Lataukset (Pure)

Abstrakti

In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz. The DC power consumption of this LNA is 97.2 mW with a supply voltage of 3V. This LNA so far represents the highest gain reported in SiGe BiCMOS technology around 240 GHz. The total chip area including the pads of this LNA is 0.45 mm2.

Alkuperäiskieli	Englanti
Otsikko	EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
Kustantaja	IEEE
Sivut	17-20
Sivumäärä	4
ISBN (elektroninen)	978-2-87487-060-6
Tila	Julkaistu - 10 tammik. 2021
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisuussa
Tapahtuma	European Microwave Integrated Circuits Conference - Utrecht, Alankomaat Kesto: 11 tammik. 2021 → 12 tammik. 2021 Konferenssinumero: 15

Conference

Conference	European Microwave Integrated Circuits Conference
Lyhennettä	EuMIC
Maa/Alue	Alankomaat
Kaupunki	Utrecht
Ajanjakso	11/01/2021 → 12/01/2021

Pääsy asiakirjaan

Najmussadat_Design_of_240-ghz_lna_bicmosAccepted author manuscript, 907 KB

https://ieeexplore.ieee.org/document/9337305

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Koko teksti

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Link to publication in Scopus

TeraCom: Kiekkotasolla integroitu THz kommunikaatiolinkki
Halonen, K., Ahamed, R., Monga, D., Singh, G., Tawfik, Y., Tanweer, M., Najmussadat, M., Stadius, K. & Numan, O.
01/01/2019 → 30/06/2022
Projekti: Academy of Finland: Other research funding
MilliRAD: Pienikokoinen millimetriaaltoalueen radiometri
Halonen, K., Ahamed, R., Najmussadat, M., Tawfik, Y. & Tanweer, M.
01/01/2018 → 30/06/2022
Projekti: Academy of Finland: Other research funding

Siteeraa tätä

@inproceedings{417eac5056654a33b6e0f5fdc7908fa5,

title = "Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology",

abstract = "In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz. The DC power consumption of this LNA is 97.2 mW with a supply voltage of 3V. This LNA so far represents the highest gain reported in SiGe BiCMOS technology around 240 GHz. The total chip area including the pads of this LNA is 0.45 mm2.",

keywords = "BiCMOS, Low Noise Amplifier (LNA), millimeter-wave, MMIC, SiGe",

author = "Md Najmussadat and Raju Ahamed and Mikko Varonen and Dristy Parveg and Yehia Tawfik and Halonen, {Kari A.I.}",

year = "2021",

month = jan,

day = "10",

language = "English",

pages = "17--20",

booktitle = "EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference",

publisher = "IEEE",

address = "United States",

note = "European Microwave Integrated Circuits Conference, EuMIC ; Conference date: 11-01-2021 Through 12-01-2021",

}

Najmussadat, M , Ahamed, R, Varonen, M, Parveg, D, Tawfik, Y & Halonen, KAI 2021, Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology. julkaisussa EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference., 9337305, IEEE, Sivut 17-20, European Microwave Integrated Circuits Conference, Utrecht, Alankomaat, 11/01/2021. <https://ieeexplore.ieee.org/document/9337305>

TY - GEN

T1 - Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology

AU - Najmussadat, Md

AU - Ahamed, Raju

AU - Varonen, Mikko

AU - Parveg, Dristy

AU - Tawfik, Yehia

AU - Halonen, Kari A.I.

N1 - Conference code: 15

PY - 2021/1/10

Y1 - 2021/1/10

N2 - In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz. The DC power consumption of this LNA is 97.2 mW with a supply voltage of 3V. This LNA so far represents the highest gain reported in SiGe BiCMOS technology around 240 GHz. The total chip area including the pads of this LNA is 0.45 mm2.

AB - In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz. The DC power consumption of this LNA is 97.2 mW with a supply voltage of 3V. This LNA so far represents the highest gain reported in SiGe BiCMOS technology around 240 GHz. The total chip area including the pads of this LNA is 0.45 mm2.

KW - BiCMOS

KW - Low Noise Amplifier (LNA)

KW - millimeter-wave

KW - MMIC

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=85100913805&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85100913805

SP - 17

EP - 20

BT - EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

PB - IEEE

T2 - European Microwave Integrated Circuits Conference

Y2 - 11 January 2021 through 12 January 2021

ER -

Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology

Abstrakti

Conference

Pääsy asiakirjaan

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Muut tiedostot ja linkit

Sormenjälki

Projektit

TeraCom: Kiekkotasolla integroitu THz kommunikaatiolinkki

MilliRAD: Pienikokoinen millimetriaaltoalueen radiometri

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