Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology

Raju Ahamed; Mikko Varonen; Dristy Parveg; Md Najmussadat; Mikko Kantanen; Kari A.I. Halonen

doi:10.1109/ISCAS45731.2020.9181170

Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology

Raju Ahamed^*, Mikko Varonen, Dristy Parveg, Md Najmussadat, Mikko Kantanen, Kari A.I. Halonen

^*Tämän työn vastaava kirjoittaja

VTT Technical Research Centre of Finland Ltd.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

7 Sitaatiot (Scopus)

161 Lataukset (Pure)

Abstrakti

This paper presents a high dynamic range E-band power detector in a 0.13 µm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from -25 dBm to +10 dBm. It shows less than 1.6 dB offset in input power detection from 72 GHz to 82 GHz. This power detector consumes 0.6 mW of DC power and the occupied core area is 0.1 mm²

Alkuperäiskieli	Englanti
Otsikko	2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings
Kustantaja	IEEE
ISBN (elektroninen)	978-1-7281-3320-1
DOI - pysyväislinkit	https://doi.org/10.1109/ISCAS45731.2020.9181170
Tila	Julkaistu - 2020
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	IEEE International Symposium on Circuits and Systems - Seville, Espanja Kesto: 10 lokak. 2020 → 21 lokak. 2020

Julkaisusarja

Nimi	IEEE International Symposium on Circuits and Systems proceedings
ISSN (painettu)	0271-4302
ISSN (elektroninen)	2158-1525

Conference

Conference	IEEE International Symposium on Circuits and Systems
Lyhennettä	ISCAS
Maa/Alue	Espanja
Kaupunki	Seville
Ajanjakso	10/10/2020 → 21/10/2020

Pääsy asiakirjaan

10.1109/ISCAS45731.2020.9181170

ELEC_Raju_Design_and_analysisFinal published version, 1,64 MB

Muut tiedostot ja linkit

Linkki julkaisuun Scopuksessa

MilliRAD: Pienikokoinen millimetriaaltoalueen radiometri
Halonen, K., Ahamed, R., Najmussadat, M., Tawfik, Y. & Tanweer, M.
01/01/2018 → 30/06/2022
Projekti: Academy of Finland: Other research funding

Siteeraa tätä

Ahamed, R., Varonen, M., Parveg, D., Najmussadat, M., Kantanen, M., & Halonen, K. A. I. (2020). Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology. teoksessa 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings Artikkeli 9181170 (IEEE International Symposium on Circuits and Systems proceedings). IEEE. https://doi.org/10.1109/ISCAS45731.2020.9181170

@inproceedings{9d75320cbb9f4e1084577229d220d384,

title = "Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology",

abstract = "This paper presents a high dynamic range E-band power detector in a 0.13 µm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from -25 dBm to +10 dBm. It shows less than 1.6 dB offset in input power detection from 72 GHz to 82 GHz. This power detector consumes 0.6 mW of DC power and the occupied core area is 0.1 mm2",

keywords = "BiCMOS, E-band, Heterojunction bipolar transistor (HBT), Millimeter-wave, MMIC, Power detector",

author = "Raju Ahamed and Mikko Varonen and Dristy Parveg and Md Najmussadat and Mikko Kantanen and Halonen, {Kari A.I.}",

note = "Funding Information: The authors would like to thank the Academy of Finland for supporting this work through MilliRAD project. The work of M. Varonen was supported through the Academy of Finland Research Fellow project MIDERI (decision no 310234). Publisher Copyright: {\textcopyright} 2020 IEEE; IEEE International Symposium on Circuits and Systems, ISCAS ; Conference date: 10-10-2020 Through 21-10-2020",

year = "2020",

doi = "10.1109/ISCAS45731.2020.9181170",

language = "English",

series = "IEEE International Symposium on Circuits and Systems proceedings",

publisher = "IEEE",

booktitle = "2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings",

address = "United States",

}

Ahamed, R, Varonen, M, Parveg, D, Najmussadat, M, Kantanen, M & Halonen, KAI 2020, Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology. julkaisussa 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings., 9181170, IEEE International Symposium on Circuits and Systems proceedings, IEEE, IEEE International Symposium on Circuits and Systems, Seville, Espanja, 10/10/2020. https://doi.org/10.1109/ISCAS45731.2020.9181170

Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology. / Ahamed, Raju; Varonen, Mikko; Parveg, Dristy et al.
2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings. IEEE, 2020. 9181170 (IEEE International Symposium on Circuits and Systems proceedings).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology

AU - Ahamed, Raju

AU - Varonen, Mikko

AU - Parveg, Dristy

AU - Najmussadat, Md

AU - Kantanen, Mikko

AU - Halonen, Kari A.I.

N1 - Funding Information: The authors would like to thank the Academy of Finland for supporting this work through MilliRAD project. The work of M. Varonen was supported through the Academy of Finland Research Fellow project MIDERI (decision no 310234). Publisher Copyright: © 2020 IEEE

PY - 2020

Y1 - 2020

N2 - This paper presents a high dynamic range E-band power detector in a 0.13 µm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from -25 dBm to +10 dBm. It shows less than 1.6 dB offset in input power detection from 72 GHz to 82 GHz. This power detector consumes 0.6 mW of DC power and the occupied core area is 0.1 mm2

AB - This paper presents a high dynamic range E-band power detector in a 0.13 µm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from -25 dBm to +10 dBm. It shows less than 1.6 dB offset in input power detection from 72 GHz to 82 GHz. This power detector consumes 0.6 mW of DC power and the occupied core area is 0.1 mm2

KW - BiCMOS

KW - E-band

KW - Heterojunction bipolar transistor (HBT)

KW - Millimeter-wave

KW - MMIC

KW - Power detector

UR - http://www.scopus.com/inward/record.url?scp=85109261114&partnerID=8YFLogxK

U2 - 10.1109/ISCAS45731.2020.9181170

DO - 10.1109/ISCAS45731.2020.9181170

M3 - Conference article in proceedings

AN - SCOPUS:85109261114

T3 - IEEE International Symposium on Circuits and Systems proceedings

BT - 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings

PB - IEEE

T2 - IEEE International Symposium on Circuits and Systems

Y2 - 10 October 2020 through 21 October 2020

ER -

Ahamed R, Varonen M, Parveg D, Najmussadat M, Kantanen M, Halonen KAI. Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology. julkaisussa 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings. IEEE. 2020. 9181170. (IEEE International Symposium on Circuits and Systems proceedings). doi: 10.1109/ISCAS45731.2020.9181170

Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology

Abstrakti

Julkaisusarja

Conference

Pääsy asiakirjaan

Muut tiedostot ja linkit

Sormenjälki

Projektit

MilliRAD: Pienikokoinen millimetriaaltoalueen radiometri

Siteeraa tätä