Demonstration of electron focusing using electronic lenses in low-dimensional system

Chengyu Yan, Michael Pepper, Patrick See, Ian Farrer, David Ritchie, Jonathan Griffiths

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

81 Lataukset (Pure)

Abstrakti

We report an all-electric integrable electron focusing lens in n-type GaAs. It is shown that a pronounced focusing peak takes place when the focal point aligns with an on-chip detector. The intensity and full width half maximum (FWHM) of the focusing peak are associated with the collimation of injected electrons. To demonstrate the reported focusing lens can be a useful tool, we investigate the characteristic of an asymmetrically gate biased quantum point contact with the assistance of a focusing lens. A correlation between the occurrence of conductance anomaly in low conductance regime and increase in FWHM of focusing peak is observed. The correlation is likely due to the electron-electron interaction. The reported electron focusing lens is essential for a more advanced electron optics device.

AlkuperäiskieliEnglanti
Sivumäärä7
JulkaisuScientific Reports
Vuosikerta10
Numero1
DOI - pysyväislinkit
TilaJulkaistu - 13 helmikuuta 2020
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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