Defects in semiconductors: recent progress in positron experiments

P. Hautojärvi

Defects in semiconductors: recent progress in positron experiments

P. Hautojärvi

Tietotekniikan laitos

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

64 Sitaatiot (Scopus)

Alkuperäiskieli	Englanti
Otsikko	The 10th International Conference on Positron Annihilation, Beijing, China, 1994
Tila	Julkaistu - 1994
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa

Tutkimusalat

defect
positron annihilation
semiconductor

Siteeraa tätä

@inproceedings{dd8b6d14108242678f2aa295c1068e2b,

title = "Defects in semiconductors: recent progress in positron experiments",

keywords = "defect, positron annihilation, semiconductor, defect, positron annihilation, semiconductor, defect, positron annihilation, semiconductor",

author = "P. Hautoj{\"a}rvi",

year = "1994",

language = "English",

booktitle = "The 10th International Conference on Positron Annihilation, Beijing, China, 1994",

}

TY - GEN

T1 - Defects in semiconductors: recent progress in positron experiments

AU - Hautojärvi, P.

PY - 1994

Y1 - 1994

KW - defect

KW - positron annihilation

KW - semiconductor

KW - defect

KW - positron annihilation

KW - semiconductor

KW - defect

KW - positron annihilation

KW - semiconductor

M3 - Conference article in proceedings

BT - The 10th International Conference on Positron Annihilation, Beijing, China, 1994

ER -