Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials

Ying Liu; Zhenbing Tan; Manohar Kumar; T. S. Abhilash; Guan Jun Liu; Pertti Hakonen

doi:10.1063/1.5042327

Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials

Ying Liu, Zhenbing Tan, Manohar Kumar, T. S. Abhilash, Guan Jun Liu, Pertti Hakonen

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

11 Sitaatiot (Scopus)

203 Lataukset (Pure)

Abstrakti

Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10-5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz.

Alkuperäiskieli	Englanti
Artikkeli	0911021
Sivut	1-7
Julkaisu	APL Materials
Vuosikerta	6
Numero	9
DOI - pysyväislinkit	https://doi.org/10.1063/1.5042327
Tila	Julkaistu - 1 syysk. 2018
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Pääsy asiakirjaan

10.1063/1.5042327

1.5042327Final published version, 2,21 MBLisenssi: CC BY

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Link to publication in Scopus

BOLOSO: Äärimmäisen herkät bolometrit turvallisuussovelluksiin
Hakonen, P. (Vastuullinen tutkija), Tomi, M. (Projektin jäsen), Kamada, M. (Projektin jäsen), Manninen, J. (Projektin jäsen), Perelshtein, M. (Projektin jäsen), Zeng, W. (Projektin jäsen), Suresh, K. (Projektin jäsen), Kumar, M. (Projektin jäsen) & Will, M. (Projektin jäsen)
01/01/2018 → 31/08/2022
Projekti: Academy of Finland: Other research funding
1/f kohina
Hakonen, P. (Vastuullinen tutkija), Will, M. (Projektin jäsen), Haque, M. (Projektin jäsen), Thanniyil Sebastian, A. (Projektin jäsen), Kamada, M. (Projektin jäsen), Sarkar, J. (Projektin jäsen) & Perelshtein, M. (Projektin jäsen)
01/09/2017 → 31/08/2021
Projekti: Academy of Finland: Other research funding

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Savin, A. (Manager) & Rissanen, A. (Other)
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title = "Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials",

abstract = "Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10-5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz.",

author = "Ying Liu and Zhenbing Tan and Manohar Kumar and Abhilash, {T. S.} and Liu, {Guan Jun} and Pertti Hakonen",

note = "| openaire: EC/H2020/696656/EU//GrapheneCore1 ",

year = "2018",

month = sep,

day = "1",

doi = "10.1063/1.5042327",

language = "English",

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journal = "APL Materials",

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T1 - Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials

AU - Liu, Ying

AU - Tan, Zhenbing

AU - Kumar, Manohar

AU - Abhilash, T. S.

AU - Liu, Guan Jun

AU - Hakonen, Pertti

N1 - | openaire: EC/H2020/696656/EU//GrapheneCore1

PY - 2018/9/1

Y1 - 2018/9/1

N2 - Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10-5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz.

AB - Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10-5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz.

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U2 - 10.1063/1.5042327

DO - 10.1063/1.5042327

M3 - Article

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JF - APL Materials

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ER -

Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials

Abstrakti

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Sormenjälki

Projektit

BOLOSO: Äärimmäisen herkät bolometrit turvallisuussovelluksiin

1/f kohina

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