Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

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Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint. / Susoma, Jannatul; Lahtinen, Jouko; Kim, Maria; Riikonen, Juha; Lipsanen, Harri.

julkaisussa: AIP ADVANCES, Vuosikerta 7, Nro 1, 015014, 01.01.2017.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Bibtex - Lataa

@article{46e2224a96e647b299a89bf334c02f99,
title = "Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint",
abstract = "We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.",
author = "Jannatul Susoma and Jouko Lahtinen and Maria Kim and Juha Riikonen and Harri Lipsanen",
year = "2017",
month = "1",
day = "1",
doi = "10.1063/1.4973918",
language = "English",
volume = "7",
journal = "AIP ADVANCES",
issn = "2158-3226",
number = "1",

}

RIS - Lataa

TY - JOUR

T1 - Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

AU - Susoma, Jannatul

AU - Lahtinen, Jouko

AU - Kim, Maria

AU - Riikonen, Juha

AU - Lipsanen, Harri

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.

AB - We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.

UR - http://www.scopus.com/inward/record.url?scp=85009179395&partnerID=8YFLogxK

U2 - 10.1063/1.4973918

DO - 10.1063/1.4973918

M3 - Article

VL - 7

JO - AIP ADVANCES

JF - AIP ADVANCES

SN - 2158-3226

IS - 1

M1 - 015014

ER -

ID: 10590066