Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Jannatul Susoma; Jouko Lahtinen; Maria Kim; Juha Riikonen; Harri Lipsanen

doi:10.1063/1.4973918

Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Jannatul Susoma, Jouko Lahtinen, Maria Kim, Juha Riikonen, Harri Lipsanen

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

49 Sitaatiot (Scopus)

257 Lataukset (Pure)

Abstrakti

We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al₂O₃ encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.

Alkuperäiskieli	Englanti
Artikkeli	015014
Sivumäärä	8
Julkaisu	AIP Advances
Vuosikerta	7
Numero	1
DOI - pysyväislinkit	https://doi.org/10.1063/1.4973918
Tila	Julkaistu - 1 tammik. 2017
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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10.1063/1.4973918

1.4973918Final published version, 15 MBLisenssi: CC BY

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title = "Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint",

abstract = "We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.",

author = "Jannatul Susoma and Jouko Lahtinen and Maria Kim and Juha Riikonen and Harri Lipsanen",

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T1 - Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

AU - Susoma, Jannatul

AU - Lahtinen, Jouko

AU - Kim, Maria

AU - Riikonen, Juha

AU - Lipsanen, Harri

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.

AB - We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.

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DO - 10.1063/1.4973918

M3 - Article

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JO - AIP Advances

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Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

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