@inproceedings{e8d58009d31349aebea184c609ff28ff,
title = "Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier",
abstract = "In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.",
keywords = "CMOS, Cryogenic, low-noise amplifiers, MMIC",
author = "Mikko Varonen and Kieran Cleary and Denizhan Karaca and Halonen, {Kari A.I.}",
year = "2018",
month = aug,
day = "17",
doi = "10.1109/MWSYM.2018.8439505",
language = "English",
isbn = "9781538650677",
volume = "2018-June",
series = "IEEE MTT-S International Microwave Symposium",
publisher = "IEEE",
pages = "1503--1506",
booktitle = "Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018",
address = "United States",
note = "IEEE MTT-S International Microwave Symposium, IMS ; Conference date: 10-06-2018 Through 15-06-2018",
}