Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se2 Solar Cells

Rouin Farshchi; Jeff Bailey; Dmitry Poplavskyy; Benjamin Hickey; David Spaulding; En Tang Kuan; Afrina Khanam; Filip Tuomisto

doi:10.1109/PVSC40753.2019.8980772

Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se₂ Solar Cells

Rouin Farshchi, Jeff Bailey, Dmitry Poplavskyy, Benjamin Hickey, David Spaulding, En Tang Kuan, Afrina Khanam, Filip Tuomisto

Teknillisen fysiikan laitos

MiaSolé Hi-Tech Corp.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

Abstrakti

We report positron annihilation spectroscopy measurements revealing the prevalence of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells. Together with compositional and structural analysis as well as capacitance-voltage measurements, an intricate interplay is observed between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration. These properties can be tuned during absorber growth by varying growth temperature and alkali content. Exploiting this interplay may be the key to achieving high efficiency in ACIGS solar cells.

Alkuperäiskieli	Englanti
Otsikko	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Kustantaja	IEEE
Sivut	3198-3200
Sivumäärä	3
ISBN (elektroninen)	9781728104942
DOI - pysyväislinkit	https://doi.org/10.1109/PVSC40753.2019.8980772
Tila	Julkaistu - 1 kesäk. 2019
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	IEEE Photovoltaic Specialists Conference - Chicago, Yhdysvallat Kesto: 16 kesäk. 2019 → 21 kesäk. 2019 Konferenssinumero: 46

Julkaisusarja

Nimi	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (painettu)	0160-8371

Conference

Conference	IEEE Photovoltaic Specialists Conference
Lyhennettä	IEEE PVSC
Maa/Alue	Yhdysvallat
Kaupunki	Chicago
Ajanjakso	16/06/2019 → 21/06/2019

YK:n kestävän kehityksen tavoitteet

Tämä tuotos edistää seuraavia kestävän kehityksen tavoitteita:

Pääsy asiakirjaan

10.1109/PVSC40753.2019.8980772

Muut tiedostot ja linkit

Link to publication in Scopus

Siteeraa tätä

Farshchi, R., Bailey, J., Poplavskyy, D., Hickey, B., Spaulding, D., Kuan, E. T., Khanam, A., & Tuomisto, F. (2019). Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se₂ Solar Cells. teoksessa 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (Sivut 3198-3200). Artikkeli 8980772 (Conference Record of the IEEE Photovoltaic Specialists Conference). IEEE. https://doi.org/10.1109/PVSC40753.2019.8980772

@inproceedings{e3a83d8f8a90463ab01b7e25736ebb6a,

title = "Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se2 Solar Cells",

abstract = "We report positron annihilation spectroscopy measurements revealing the prevalence of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells. Together with compositional and structural analysis as well as capacitance-voltage measurements, an intricate interplay is observed between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration. These properties can be tuned during absorber growth by varying growth temperature and alkali content. Exploiting this interplay may be the key to achieving high efficiency in ACIGS solar cells.",

keywords = "ACIGS, defects, photovoltaic cells, positron annihilation, potassium, reactive sputtering, vacancies",

author = "Rouin Farshchi and Jeff Bailey and Dmitry Poplavskyy and Benjamin Hickey and David Spaulding and Kuan, {En Tang} and Afrina Khanam and Filip Tuomisto",

year = "2019",

month = jun,

day = "1",

doi = "10.1109/PVSC40753.2019.8980772",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "IEEE",

pages = "3198--3200",

booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",

address = "United States",

note = "IEEE Photovoltaic Specialists Conference, IEEE PVSC ; Conference date: 16-06-2019 Through 21-06-2019",

}

Farshchi, R, Bailey, J, Poplavskyy, D, Hickey, B, Spaulding, D, Kuan, ET, Khanam, A & Tuomisto, F 2019, Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se₂ Solar Cells. julkaisussa 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980772, Conference Record of the IEEE Photovoltaic Specialists Conference, IEEE, Sivut 3198-3200, IEEE Photovoltaic Specialists Conference, Chicago, Illinois, Yhdysvallat, 16/06/2019. https://doi.org/10.1109/PVSC40753.2019.8980772

Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se₂ Solar Cells. / Farshchi, Rouin; Bailey, Jeff; Poplavskyy, Dmitry et al.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. IEEE, 2019. s. 3198-3200 8980772 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se2 Solar Cells

AU - Farshchi, Rouin

AU - Bailey, Jeff

AU - Poplavskyy, Dmitry

AU - Hickey, Benjamin

AU - Spaulding, David

AU - Kuan, En Tang

AU - Khanam, Afrina

AU - Tuomisto, Filip

N1 - Conference code: 46

PY - 2019/6/1

Y1 - 2019/6/1

N2 - We report positron annihilation spectroscopy measurements revealing the prevalence of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells. Together with compositional and structural analysis as well as capacitance-voltage measurements, an intricate interplay is observed between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration. These properties can be tuned during absorber growth by varying growth temperature and alkali content. Exploiting this interplay may be the key to achieving high efficiency in ACIGS solar cells.

AB - We report positron annihilation spectroscopy measurements revealing the prevalence of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells. Together with compositional and structural analysis as well as capacitance-voltage measurements, an intricate interplay is observed between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration. These properties can be tuned during absorber growth by varying growth temperature and alkali content. Exploiting this interplay may be the key to achieving high efficiency in ACIGS solar cells.

KW - ACIGS

KW - defects

KW - photovoltaic cells

KW - positron annihilation

KW - potassium

KW - reactive sputtering

KW - vacancies

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M3 - Conference article in proceedings

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019

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Farshchi R, Bailey J, Poplavskyy D, Hickey B, Spaulding D, Kuan ET et al. Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se₂ Solar Cells. julkaisussa 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. IEEE. 2019. s. 3198-3200. 8980772. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC40753.2019.8980772