Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • RAS - Ioffe Physico Technical Institute

Kuvaus

Various techniques for morphological evolution of InGaN/GaN multiple quantum well (MQW) structures grown by metalorganic chemical vapor deposition have been evaluated. Atomic force microscopy, photoluminescence (PL) and X-ray diffraction measurements have been used for characterization. It is shown that inclusions, that are generated into the V-defects in the InGaN quantum wells (QW), can be removed by introducing a small amount of hydrogen during the growth of GaN barriers. This hydrogen treatment results in partial loss of indium from the QWs, but smooth surface morphology of the MQW structure and improved optical quality of InGaN wells are obtained. The density of the V-defects could be reduced by reducing the dislocation density of the underlying GaN buffer. © 2007 Elsevier B.V. All rights reserved.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut324-329
Sivumäärä6
JulkaisuJournal of Crystal Growth
Vuosikerta300
Numero2
TilaJulkaistu - 15 maaliskuuta 2007
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 3475655