Conducted Noise Emissions of GaN based DC-DC Converters for High Voltage Gain Applications

High step-up (HSU) boost converters have various applications in renewable energy resources, electrical automotive industry etc. However, most of these converters have the drawback of low power density. Therefore, a two-phase interleaved boost converter was modified to achieve high voltage gain and also maintain the high-power density. However, for industrial applications, it is critical for this converter to comply with electro-magnetic interference (EMI) standards. This converter has the feature of including an extra winding and two
additional diodes in interleaved boost converter. Hence, in this paper conducted emissions of modified high voltage gain converter topology are compared with the coupled inductor based interleaved boost converter to analyze the effect of the topology modifications. To analyze the effectiveness of three coupled windings, this paper also includes the comparison of emissions of HSU topology with another high voltage gain topology (Cascaded Boost Converter). As a validation of this study, GaN prototypes were built. Experimental results showed that in addition to switching frequency, conducted emissions also depend on the
operating modes of each converter.