Comparison of epitaxial thin layer GaN and InP passivations on InGaAs near-surface quantum wells

Abuduwayiti Aierken, Juha Riikonen, Jaakko Sormunen, Markku Sopanen, Harri Lipsanen

    Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

    9 Sitaatiot (Scopus)
    16 Lataukset (Pure)

    Abstrakti

    The optical properties of the in situ epitaxial GaN and InP passivated InGaAs∕GaAs near-surface quantum wells, which were fabricated by metal organic vapor phase epitaxy, are investigated. Low-temperature photoluminescence (PL), time-resolved photoluminescence, and photoreflectance are used to study the passivation effect. Both GaN and InP passivations are observed to significantly enhance the PL intensity and carrier lifetime and to reduce the surface electrical fields. Comparison of the methods shows that the epitaxial InP passivation is more effective. However, epitaxial GaN and nitridation methods are comparable with InP passivation.
    AlkuperäiskieliEnglanti
    Artikkeli221112
    Sivut1-3
    Sivumäärä3
    JulkaisuApplied Physics Letters
    Vuosikerta88
    Numero22
    DOI - pysyväislinkit
    TilaJulkaistu - 2006
    OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

    Tutkimusalat

    • passivation, QW, photoluminescence, MOVPE

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