CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency

Olli E. Setälä, Martin J. Prest, Konstantin D. Stefanov, Douglas Jordan, Matthew R. Soman, Ville Vähänissi, Hele Savin

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

75 Lataukset (Pure)

Abstrakti

Even though the recent progress made in complementary metal–oxide–semiconductor (CMOS) image sensors (CIS) has enabled numerous applications affecting our daily lives, the technology still relies on conventional methods such as antireflective coatings and ion-implanted back-surface field to reduce optical and electrical losses resulting in limited device performance. In this work, these methods are replaced with nanostructured surfaces and atomic layer deposited surface passivation. The results show that such surface nanoengineering applied to a commercial backside illuminated CIS significantly extends its spectral range and enhances its photosensitivity as demonstrated by >90% quantum efficiency in the 300–700 nm wavelength range. The surface nanoengineering also reduces the dark current by a factor of three. While the photoresponse uniformity of the sensor is seen to be slightly better, possible scattering from the nanostructures can lead to increased optical crosstalk between the pixels. The results demonstrate the vast potential of surface nanoengineering in improving the performance of CIS for a wide range of applications.

AlkuperäiskieliEnglanti
Artikkeli2304001
Sivumäärä8
JulkaisuSmall
Vuosikerta19
Numero47
Varhainen verkossa julkaisun päivämäärä2023
DOI - pysyväislinkit
TilaJulkaistu - 22 marrask. 2023
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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