Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • VTT MIKES Metrology
  • Heidelberg University 

Kuvaus

We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magnitude larger than predicted by theoretical calculations. With the second method, transmission electron microscopy, we demonstrate that variations in the barrier thickness are a plausible explanation for the larger effective area and an enhancement of higher order tunneling processes.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli073702
Sivut1-4
Sivumäärä4
JulkaisuJournal of Applied Physics
Vuosikerta116
Numero7
TilaJulkaistu - 2014
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

    Tutkimusalat

  • SET, TEM, tunnel junctions

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