Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging

T. Aref, A. Averin, S. van Dijken, A. Ferring, M. Koberidze, Ville Maisi, H.Q. Nguyend, R.M. Nieminen, J.P. Pekola, L.D. Yao

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

13 Sitaatiot (Scopus)
149 Lataukset (Pure)

Abstrakti

We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magnitude larger than predicted by theoretical calculations. With the second method, transmission electron microscopy, we demonstrate that variations in the barrier thickness are a plausible explanation for the larger effective area and an enhancement of higher order tunneling processes.
AlkuperäiskieliEnglanti
Artikkeli073702
Sivut1-4
Sivumäärä4
JulkaisuJournal of Applied Physics
Vuosikerta116
Numero7
DOI - pysyväislinkit
TilaJulkaistu - 2014
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

Tutkimusalat

  • SET
  • TEM
  • tunnel junctions

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