Can hydrogenation mitigate Cu-induced bulk degradation in silicon?

Ismo T.S. Heikkinen, Brendan Wright, Anastasia H. Soeriyadi, Marko Yli-Koski, Moonyong Kim, Ville Vähänissi, Brett J. Hallam, Hele Savin

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussaConference contributionScientificvertaisarvioitu

9 Lataukset (Pure)

Abstrakti

Many defects can cause significant bulk degradation in crystalline silicon, which inherently limits solar cell efficiency. Perhaps the most well-known source of light-induced bulk degradation (LID) in Czochralski-grown silicon is the boron-oxygen defect. However, metal impurities, such as copper, can also cause severe degradation. Advanced hydrogenation processes incorporating minority carrier injection can effectively passivate boron-oxygen complexes, but their effect on copper-induced degradation has not been studied previously. Herein, we explore the effect of hydrogenation on LID in copper-contaminated silicon. Without hydrogenation the bulk lifetime decreases down to 5\ \mu\mathrm{s} while in hydrogenated samples the bulk lifetime remains above 300\ \mu\mathrm{s} during the whole degradation cycle. The results thus indicate that even in heavily copper-contaminated silicon hydrogenation can passivate Cu precipitates and mitigate Cu-LID.

AlkuperäiskieliEnglanti
Otsikko2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
KustantajaIEEE
Sivut2582-2585
Sivumäärä4
ISBN (elektroninen)9781728161150
DOI - pysyväislinkit
TilaJulkaistu - 2020
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaIEEE Photovoltaic Specialists Conference - Calgary, Kanada
Kesto: 15 kesäkuuta 202021 elokuuta 2020
Konferenssinumero: 47

Julkaisusarja

NimiConference record of the IEEE Photovoltaic Specialists Conference
ISSN (painettu)0160-8371

Conference

ConferenceIEEE Photovoltaic Specialists Conference
LyhennettäPVSC
MaaKanada
KaupunkiCalgary
Ajanjakso15/06/202021/08/2020

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