Bonding of ALD alumina for advanced SOI substrates

Tommi Suni; Riikka L. Puurunen; Oili Ylivaara; Hannu Kattelus; Kimmo Henttinen; Tadashi Ishida; Hiroyuki Fujita

doi:10.1149/1.3483501

Bonding of ALD alumina for advanced SOI substrates

Tommi Suni^*, Riikka L. Puurunen, Oili Ylivaara, Hannu Kattelus, Kimmo Henttinen, Tadashi Ishida, Hiroyuki Fujita

^*Tämän työn vastaava kirjoittaja

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Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference contribution › Scientific › vertaisarvioitu

7 Sitaatiot (Scopus)

Abstrakti

Silicon-on-insulator (SOI) substrates have become important starting materials for IC and MEMS fabrication. In some cases, it would be beneficial to add another buried material(s) or to replace the silicon dioxide film. Atomic layer deposition (ALD) is a method to fabricate uniform thin films with well defined thickness. We have studied direct bonding of ALD alumina (Al ₂O₃) thin films and possibilities to use it as an insulating material in tailored SOI wafers. From bonded wafer pairs the amount of voids and bond strength were measured. We also observed the bonded interface with cross sectional transmission electron microscopy (TEM). It appears that ALD Al₂O₃ can be used as a buried layer in novel SOI substrates.

Alkuperäiskieli	Englanti
Otsikko	Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele
Sivut	137-144
Sivumäärä	8
Vuosikerta	33
Painos	4
DOI - pysyväislinkit	https://doi.org/10.1149/1.3483501
Tila	Julkaistu - 2010
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisuussa
Tapahtuma	Electrochemical Society Meeting - Las Vegas , Yhdysvallat Kesto: 10 lokak. 2010 → 15 lokak. 2010 Konferenssinumero: 218

Conference

Conference	Electrochemical Society Meeting
Lyhennettä	ECS
Maa/Alue	Yhdysvallat
Kaupunki	Las Vegas
Ajanjakso	10/10/2010 → 15/10/2010

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10.1149/1.3483501

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@inproceedings{b3cd916ed86c4a84a201217100bb8584,

title = "Bonding of ALD alumina for advanced SOI substrates",

abstract = "Silicon-on-insulator (SOI) substrates have become important starting materials for IC and MEMS fabrication. In some cases, it would be beneficial to add another buried material(s) or to replace the silicon dioxide film. Atomic layer deposition (ALD) is a method to fabricate uniform thin films with well defined thickness. We have studied direct bonding of ALD alumina (Al 2O3) thin films and possibilities to use it as an insulating material in tailored SOI wafers. From bonded wafer pairs the amount of voids and bond strength were measured. We also observed the bonded interface with cross sectional transmission electron microscopy (TEM). It appears that ALD Al2O3 can be used as a buried layer in novel SOI substrates.",

author = "Tommi Suni and Puurunen, {Riikka L.} and Oili Ylivaara and Hannu Kattelus and Kimmo Henttinen and Tadashi Ishida and Hiroyuki Fujita",

year = "2010",

doi = "10.1149/1.3483501",

language = "English",

isbn = "9781566778237",

volume = "33",

pages = "137--144",

booktitle = "Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele",

edition = "4",

note = "Electrochemical Society Meeting, ECS ; Conference date: 10-10-2010 Through 15-10-2010",

}

Suni, T, Puurunen, RL , Ylivaara, O, Kattelus, H, Henttinen, K, Ishida, T & Fujita, H 2010, Bonding of ALD alumina for advanced SOI substrates. julkaisussa Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele. 4 toim, Vuosikerta 33, Sivut 137-144, Electrochemical Society Meeting, Las Vegas , Nevada, Yhdysvallat, 10/10/2010. https://doi.org/10.1149/1.3483501

TY - GEN

T1 - Bonding of ALD alumina for advanced SOI substrates

AU - Suni, Tommi

AU - Puurunen, Riikka L.

AU - Ylivaara, Oili

AU - Kattelus, Hannu

AU - Henttinen, Kimmo

AU - Ishida, Tadashi

AU - Fujita, Hiroyuki

N1 - Conference code: 218

PY - 2010

Y1 - 2010

N2 - Silicon-on-insulator (SOI) substrates have become important starting materials for IC and MEMS fabrication. In some cases, it would be beneficial to add another buried material(s) or to replace the silicon dioxide film. Atomic layer deposition (ALD) is a method to fabricate uniform thin films with well defined thickness. We have studied direct bonding of ALD alumina (Al 2O3) thin films and possibilities to use it as an insulating material in tailored SOI wafers. From bonded wafer pairs the amount of voids and bond strength were measured. We also observed the bonded interface with cross sectional transmission electron microscopy (TEM). It appears that ALD Al2O3 can be used as a buried layer in novel SOI substrates.

AB - Silicon-on-insulator (SOI) substrates have become important starting materials for IC and MEMS fabrication. In some cases, it would be beneficial to add another buried material(s) or to replace the silicon dioxide film. Atomic layer deposition (ALD) is a method to fabricate uniform thin films with well defined thickness. We have studied direct bonding of ALD alumina (Al 2O3) thin films and possibilities to use it as an insulating material in tailored SOI wafers. From bonded wafer pairs the amount of voids and bond strength were measured. We also observed the bonded interface with cross sectional transmission electron microscopy (TEM). It appears that ALD Al2O3 can be used as a buried layer in novel SOI substrates.

UR - http://www.scopus.com/inward/record.url?scp=78650744300&partnerID=8YFLogxK

U2 - 10.1149/1.3483501

DO - 10.1149/1.3483501

M3 - Conference contribution

AN - SCOPUS:78650744300

SN - 9781566778237

VL - 33

SP - 137

EP - 144

BT - Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele

T2 - Electrochemical Society Meeting

Y2 - 10 October 2010 through 15 October 2010

ER -

Bonding of ALD alumina for advanced SOI substrates

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