Black silicon n-Type photodiodes with high response over wide spectral range

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu

Tutkijat

Organisaatiot

  • Helsinki Institute of Physics

Kuvaus

Commercial photodiodes suffer from reflection losses and different recombination losses that reduce the collection efficiency of photogenerated charge carriers. Recently, we realized a near-ideal silicon photodiode, which steps closer to the physical performance limits of silicon photodiodes than any other silicon photodiode realized before. Our device exhibits an external quantum efficiency above 95% over the wavelength range of 235-980 nm, and provides a very high response at incident angles of up to 70 degrees. The high quantum efficiency is reached by 1) virtually eliminating front surface reflectance by forming a "black silicon" nanostructured surface having dimensions in the range of wavelength of optical light and 2) using an induced junction for signal collection, formed by negatively charged alumina, instead of a conventional doped p-n junction. Here, we describe the latest efforts in further development of the photodiode technology. In particular, we report improvements both in the short wavelength response via better control of the surface quality, and superior response to photons with energies close to the silicon bandgap.

Yksityiskohdat

AlkuperäiskieliEnglanti
OtsikkoOptical Sensors 2017
TilaJulkaistu - 2017
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaSPIE Optics + Optoelectronics / Optical Sensors - Prague, Tshekki
Kesto: 24 huhtikuuta 201727 huhtikuuta 2017

Julkaisusarja

NimiProceedings of SPIE : the International Society for Optical Engineering
KustantajaSPIE
Vuosikerta10231
ISSN (painettu)0277-786X
ISSN (elektroninen)1996-756X

Conference

ConferenceSPIE Optics + Optoelectronics / Optical Sensors
MaaTshekki
KaupunkiPrague
Ajanjakso24/04/201727/04/2017

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