Black silicon boron emitter solar cells with EQE above 95% in UV

Kexun Chen; Ville Vähänissi; Zahra Jahanshah Rad; Juha Pekka Lehtio; Pekka Laukkanen; Marko Yli-Koski; Hele Savin

doi:10.1109/PVSC45281.2020.9300686

Black silicon boron emitter solar cells with EQE above 95% in UV

Kexun Chen
, Ville Vähänissi
, Zahra Jahanshah Rad
, Juha Pekka Lehtio
, Pekka Laukkanen
, Marko Yli-Koski
, Hele Savin

University of Turku

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

1 Sitaatiot (Scopus)

Abstrakti

Silicon solar cells are known to suffer from poor UV response because of high reflectance combined with recombination at the front side of the cell - including heavily doped emitter. While black silicon (b-Si) has proven to be excellent technology to overcome the reflectance losses, it has been challenging to integrate it to PERC cells with recombination-free emitter without compromising the optical properties. Here we show that no such tradeoffs are needed when using boron emitter with proper surface passivation. We demonstrate a b-Si emitter that has saturation current as low as 33 fA/cm2 resulting close to 100% EQE even down to 300 nm. This result should be interesting for the PV industry looking for further improvements in their current products.

Alkuperäiskieli	Englanti
Otsikko	Proceedings of the 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Kustantaja	IEEE
Sivut	2586-2589
Sivumäärä	4
ISBN (elektroninen)	9781728161150
DOI - pysyväislinkit	https://doi.org/10.1109/PVSC45281.2020.9300686
Tila	Julkaistu - 2020
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	IEEE Photovoltaic Specialists Conference - Calgary, Kanada Kesto: 15 kesäk. 2020 → 21 elok. 2020 Konferenssinumero: 47

Julkaisusarja

Nimi	Conference record of the IEEE Photovoltaic Specialists Conference
ISSN (painettu)	0160-8371

Conference

Conference	IEEE Photovoltaic Specialists Conference
Lyhennettä	PVSC
Maa/Alue	Kanada
Kaupunki	Calgary
Ajanjakso	15/06/2020 → 21/08/2020

Rahoitus

ACKNOWLEDGMENT The work was funded through the Business Finland TUTLI project (SISUPROCO, 1671/31/2018). The work is also included in the Flagship on Photonics Research and Innovation PREIN funded by Academy of Finland. The authors acknowledge also the provision of facilities and technical support by Micronova Nanofabrication Centre and Nanomicroscopy Centre in Espoo, Finland within the OtaNano research infrastructure at Aalto University.

YK:n kestävän kehityksen tavoitteet

Tämä tuotos edistää seuraavia kestävän kehityksen tavoitteita:

SDG 7 – Edullinen ja puhdas energia

Pääsy asiakirjaan

10.1109/PVSC45281.2020.9300686

Muut tiedostot ja linkit

Link to publication in Scopus

2 Päättynyt

-: Fotoniikan Tutkimus ja Innovaatio
Savin, H. (Vastuullinen johtaja), Rauha, I. (Projektin jäsen), Mulbagal Rajanna, P. (Projektin jäsen), Ayedh, H. (Projektin jäsen), Liu, H. (Projektin jäsen) & Vähänissi, V. (Projektin jäsen)
01/01/2019 → 31/12/2022
Projekti: Academy of Finland: Other research funding
SISUPROCO: Silicon Surface Processing Commercialization
Savin, H. (Vastuullinen johtaja), Parkkila, A. (Projektin jäsen), Mack, I. (Projektin jäsen), Vähänissi, V. (Projektin jäsen) & Rosta, K. (Projektin jäsen)
01/06/2018 → 31/12/2019
Projekti: Business Finland: Other research funding

OtaNano
Rissanen, A. (Manager)
Aalto-yliopisto
Laitteistot/tilat: Facility
OtaNano Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Laitteistot/tilat: Facility

Siteeraa tätä

Chen, K., Vähänissi, V., Rad, Z. J., Lehtio, J. P., Laukkanen, P., Yli-Koski, M., & Savin, H. (2020). Black silicon boron emitter solar cells with EQE above 95% in UV. teoksessa Proceedings of the 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 (Sivut 2586-2589). Artikkeli 9300686 (Conference record of the IEEE Photovoltaic Specialists Conference). IEEE. https://doi.org/10.1109/PVSC45281.2020.9300686

@inproceedings{b9b087daeeb948d6859955c17708da69,

title = "Black silicon boron emitter solar cells with EQE above 95\% in UV",

abstract = "Silicon solar cells are known to suffer from poor UV response because of high reflectance combined with recombination at the front side of the cell - including heavily doped emitter. While black silicon (b-Si) has proven to be excellent technology to overcome the reflectance losses, it has been challenging to integrate it to PERC cells with recombination-free emitter without compromising the optical properties. Here we show that no such tradeoffs are needed when using boron emitter with proper surface passivation. We demonstrate a b-Si emitter that has saturation current as low as 33 fA/cm2 resulting close to 100\% EQE even down to 300 nm. This result should be interesting for the PV industry looking for further improvements in their current products.",

keywords = "black silicon, emitter passivation, metallization patterning, quantum efficiency",

author = "Kexun Chen and Ville V{\"a}h{\"a}nissi and Rad, \{Zahra Jahanshah\} and Lehtio, \{Juha Pekka\} and Pekka Laukkanen and Marko Yli-Koski and Hele Savin",

year = "2020",

doi = "10.1109/PVSC45281.2020.9300686",

language = "English",

series = "Conference record of the IEEE Photovoltaic Specialists Conference",

publisher = "IEEE",

pages = "2586--2589",

booktitle = "Proceedings of the 47th IEEE Photovoltaic Specialists Conference, PVSC 2020",

address = "United States",

note = "IEEE Photovoltaic Specialists Conference, PVSC ; Conference date: 15-06-2020 Through 21-08-2020",

}

Chen, K , Vähänissi, V, Rad, ZJ, Lehtio, JP, Laukkanen, P, Yli-Koski, M & Savin, H 2020, Black silicon boron emitter solar cells with EQE above 95% in UV. julkaisussa Proceedings of the 47th IEEE Photovoltaic Specialists Conference, PVSC 2020., 9300686, Conference record of the IEEE Photovoltaic Specialists Conference, IEEE, Sivut 2586-2589, IEEE Photovoltaic Specialists Conference, Calgary, Kanada, 15/06/2020. https://doi.org/10.1109/PVSC45281.2020.9300686

Black silicon boron emitter solar cells with EQE above 95% in UV. / Chen, Kexun ; Vähänissi, Ville; Rad, Zahra Jahanshah et al.
Proceedings of the 47th IEEE Photovoltaic Specialists Conference, PVSC 2020. IEEE, 2020. s. 2586-2589 9300686 (Conference record of the IEEE Photovoltaic Specialists Conference).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Black silicon boron emitter solar cells with EQE above 95% in UV

AU - Chen, Kexun

AU - Vähänissi, Ville

AU - Rad, Zahra Jahanshah

AU - Lehtio, Juha Pekka

AU - Laukkanen, Pekka

AU - Yli-Koski, Marko

AU - Savin, Hele

N1 - Conference code: 47

PY - 2020

Y1 - 2020

N2 - Silicon solar cells are known to suffer from poor UV response because of high reflectance combined with recombination at the front side of the cell - including heavily doped emitter. While black silicon (b-Si) has proven to be excellent technology to overcome the reflectance losses, it has been challenging to integrate it to PERC cells with recombination-free emitter without compromising the optical properties. Here we show that no such tradeoffs are needed when using boron emitter with proper surface passivation. We demonstrate a b-Si emitter that has saturation current as low as 33 fA/cm2 resulting close to 100% EQE even down to 300 nm. This result should be interesting for the PV industry looking for further improvements in their current products.

AB - Silicon solar cells are known to suffer from poor UV response because of high reflectance combined with recombination at the front side of the cell - including heavily doped emitter. While black silicon (b-Si) has proven to be excellent technology to overcome the reflectance losses, it has been challenging to integrate it to PERC cells with recombination-free emitter without compromising the optical properties. Here we show that no such tradeoffs are needed when using boron emitter with proper surface passivation. We demonstrate a b-Si emitter that has saturation current as low as 33 fA/cm2 resulting close to 100% EQE even down to 300 nm. This result should be interesting for the PV industry looking for further improvements in their current products.

KW - black silicon

KW - emitter passivation

KW - metallization patterning

KW - quantum efficiency

UR - https://www.scopus.com/pages/publications/85099578644

U2 - 10.1109/PVSC45281.2020.9300686

DO - 10.1109/PVSC45281.2020.9300686

M3 - Conference article in proceedings

AN - SCOPUS:85099578644

T3 - Conference record of the IEEE Photovoltaic Specialists Conference

SP - 2586

EP - 2589

BT - Proceedings of the 47th IEEE Photovoltaic Specialists Conference, PVSC 2020

PB - IEEE

T2 - IEEE Photovoltaic Specialists Conference

Y2 - 15 June 2020 through 21 August 2020

ER -

Black silicon boron emitter solar cells with EQE above 95% in UV

Abstrakti

Julkaisusarja

Conference

Rahoitus

YK:n kestävän kehityksen tavoitteet

Pääsy asiakirjaan

Muut tiedostot ja linkit

Sormenjälki

Projektit

-: Fotoniikan Tutkimus ja Innovaatio

SISUPROCO: Silicon Surface Processing Commercialization

Laitteet

OtaNano

OtaNano Nanofab

Siteeraa tätä