Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu

Tutkijat

Organisaatiot

  • Lund University
  • University of Glasgow

Kuvaus

We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

Yksityiskohdat

AlkuperäiskieliEnglanti
Otsikko2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
TilaJulkaistu - 5 lokakuuta 2015
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaInternational Conference on Simulation of Semiconductor Processes and Devices - Washington, Yhdysvallat
Kesto: 9 syyskuuta 201511 syyskuuta 2015
Konferenssinumero: 20

Julkaisusarja

Nimi International Conference on Simulation of Semiconductor Processes and Devices
ISSN (painettu)1946-1569

Conference

ConferenceInternational Conference on Simulation of Semiconductor Processes and Devices
LyhennettäSISPAD 2015
MaaYhdysvallat
KaupunkiWashington
Ajanjakso09/09/201511/09/2015

ID: 9529871