Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Pyry Kivisaari; Toufik Sadi; Jingrui Li; Vihar Georgiev; Jani Oksanen; Patrick Rinke; Jukka Tulkki

doi:10.1109/NUSOD.2015.7292797

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Pyry Kivisaari, Toufik Sadi, Jingrui Li, Vihar Georgiev, Jani Oksanen, Patrick Rinke, Jukka Tulkki

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

Abstrakti

We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.

Alkuperäiskieli	Englanti
Otsikko	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Kustantaja	IEEE
Sivut	11-12
Sivumäärä	2
Vuosikerta	2015-May
ISBN (painettu)	978-1-4799-8379-7
DOI - pysyväislinkit	https://doi.org/10.1109/NUSOD.2015.7292797
Tila	Julkaistu - 10 toukok. 2015
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	International Conference on Numerical Simulation of Optoelectronic Devices - Taipei, Taiwan Kesto: 7 syysk. 2015 → 11 syysk. 2015 Konferenssinumero: 15

Conference

Conference	International Conference on Numerical Simulation of Optoelectronic Devices
Lyhennettä	NUSOD
Maa/Alue	Taiwan
Kaupunki	Taipei
Ajanjakso	07/09/2015 → 11/09/2015

Pääsy asiakirjaan

10.1109/NUSOD.2015.7292797

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Link to publication in Scopus

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@inproceedings{befb5738fa2b4f2db5e678ba5cab1f44,

title = "Bipolar Monte Carlo simulation of hot carriers in III-N LEDs",

abstract = "We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.",

keywords = "Charge carrier processes, Gallium nitride, Hot carrier effects, Light emitting diodes, Monte Carlo methods, Scattering",

author = "Pyry Kivisaari and Toufik Sadi and Jingrui Li and Vihar Georgiev and Jani Oksanen and Patrick Rinke and Jukka Tulkki",

year = "2015",

month = may,

day = "10",

doi = "10.1109/NUSOD.2015.7292797",

language = "English",

isbn = "978-1-4799-8379-7",

volume = "2015-May",

pages = "11--12",

booktitle = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",

publisher = "IEEE",

address = "United States",

note = "International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD ; Conference date: 07-09-2015 Through 11-09-2015",

}

Kivisaari, P, Sadi, T, Li, J, Georgiev, V, Oksanen, J , Rinke, P & Tulkki, J 2015, Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. julkaisussa Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD. Vuosikerta 2015-May, 7292797, IEEE, Sivut 11-12, International Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, 07/09/2015. https://doi.org/10.1109/NUSOD.2015.7292797

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. / Kivisaari, Pyry; Sadi, Toufik; Li, Jingrui et al.
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD. Vuosikerta 2015-May IEEE, 2015. s. 11-12 7292797.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

AU - Kivisaari, Pyry

AU - Sadi, Toufik

AU - Li, Jingrui

AU - Georgiev, Vihar

AU - Oksanen, Jani

AU - Rinke, Patrick

AU - Tulkki, Jukka

N1 - Conference code: 15

PY - 2015/5/10

Y1 - 2015/5/10

N2 - We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.

AB - We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.

KW - Charge carrier processes

KW - Gallium nitride

KW - Hot carrier effects

KW - Light emitting diodes

KW - Monte Carlo methods

KW - Scattering

UR - http://www.scopus.com/inward/record.url?scp=84959233297&partnerID=8YFLogxK

U2 - 10.1109/NUSOD.2015.7292797

DO - 10.1109/NUSOD.2015.7292797

M3 - Conference article in proceedings

AN - SCOPUS:84959233297

SN - 978-1-4799-8379-7

VL - 2015-May

SP - 11

EP - 12

BT - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD

PB - IEEE

T2 - International Conference on Numerical Simulation of Optoelectronic Devices

Y2 - 7 September 2015 through 11 September 2015

ER -

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

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Conference

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