Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Pyry Kivisaari; Toufik Sadi; Jingrui Li; Vihar Georgiev; Jani Oksanen; Patrick Rinke; Jukka Tulkki

doi:10.1109/SISPAD.2015.7292342

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Pyry Kivisaari, Toufik Sadi, Jingrui Li, Vihar Georgiev, Jani Oksanen, Patrick Rinke, Jukka Tulkki

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference contribution › Scientific › vertaisarvioitu

Abstrakti

We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

Alkuperäiskieli	Englanti
Otsikko	2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Kustantaja	IEEE
Sivut	393-396
Sivumäärä	4
Vuosikerta	2015-October
ISBN (elektroninen)	9781467378581
DOI - pysyväislinkit	https://doi.org/10.1109/SISPAD.2015.7292342
Tila	Julkaistu - 5 lokak. 2015
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisuussa
Tapahtuma	International Conference on Simulation of Semiconductor Processes and Devices - Washington, Yhdysvallat Kesto: 9 syysk. 2015 → 11 syysk. 2015 Konferenssinumero: 20

Julkaisusarja

Nimi	International Conference on Simulation of Semiconductor Processes and Devices
ISSN (painettu)	1946-1569

Conference

Conference	International Conference on Simulation of Semiconductor Processes and Devices
Lyhennettä	SISPAD 2015
Maa/Alue	Yhdysvallat
Kaupunki	Washington
Ajanjakso	09/09/2015 → 11/09/2015

Pääsy asiakirjaan

10.1109/SISPAD.2015.7292342

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Kivisaari, P., Sadi, T., Li, J., Georgiev, V., Oksanen, J., Rinke, P., & Tulkki, J. (2015). Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. teoksessa 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 (Vuosikerta 2015-October, Sivut 393-396). [7292342] ( International Conference on Simulation of Semiconductor Processes and Devices). IEEE. https://doi.org/10.1109/SISPAD.2015.7292342

@inproceedings{8c44060d9bf34b97875a6cce2feea623,

title = "Bipolar Monte Carlo simulation of hot carriers in III-N LEDs",

abstract = "We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.",

author = "Pyry Kivisaari and Toufik Sadi and Jingrui Li and Vihar Georgiev and Jani Oksanen and Patrick Rinke and Jukka Tulkki",

year = "2015",

month = oct,

day = "5",

doi = "10.1109/SISPAD.2015.7292342",

language = "English",

volume = "2015-October",

series = " International Conference on Simulation of Semiconductor Processes and Devices",

publisher = "IEEE",

pages = "393--396",

booktitle = "2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015",

address = "United States",

note = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 ; Conference date: 09-09-2015 Through 11-09-2015",

}

Kivisaari, P, Sadi, T, Li, J, Georgiev, V, Oksanen, J , Rinke, P & Tulkki, J 2015, Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. julkaisussa 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. Vuosikerta 2015-October, 7292342, International Conference on Simulation of Semiconductor Processes and Devices, IEEE, Sivut 393-396, International Conference on Simulation of Semiconductor Processes and Devices, Washington, Yhdysvallat, 09/09/2015. https://doi.org/10.1109/SISPAD.2015.7292342

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. / Kivisaari, Pyry; Sadi, Toufik; Li, Jingrui et al.

2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. Vuosikerta 2015-October IEEE, 2015. s. 393-396 7292342 ( International Conference on Simulation of Semiconductor Processes and Devices).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference contribution › Scientific › vertaisarvioitu

TY - GEN

T1 - Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

AU - Kivisaari, Pyry

AU - Sadi, Toufik

AU - Li, Jingrui

AU - Georgiev, Vihar

AU - Oksanen, Jani

AU - Rinke, Patrick

AU - Tulkki, Jukka

N1 - Conference code: 20

PY - 2015/10/5

Y1 - 2015/10/5

N2 - We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

AB - We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

UR - http://www.scopus.com/inward/record.url?scp=84959337323&partnerID=8YFLogxK

U2 - 10.1109/SISPAD.2015.7292342

DO - 10.1109/SISPAD.2015.7292342

M3 - Conference contribution

AN - SCOPUS:84959337323

VL - 2015-October

T3 - International Conference on Simulation of Semiconductor Processes and Devices

SP - 393

EP - 396

BT - 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015

PB - IEEE

T2 - International Conference on Simulation of Semiconductor Processes and Devices

Y2 - 9 September 2015 through 11 September 2015

ER -

Kivisaari P, Sadi T, Li J, Georgiev V, Oksanen J , Rinke P et al. Bipolar Monte Carlo simulation of hot carriers in III-N LEDs. julkaisussa 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. Vuosikerta 2015-October. IEEE. 2015. s. 393-396. 7292342. ( International Conference on Simulation of Semiconductor Processes and Devices). doi: 10.1109/SISPAD.2015.7292342

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

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