Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

Jaehyun Lee; Jie Liang; Salvatore M. Amoroso; Toufik Sadi; Liping Wang; Flamen Asenov; Andrew Pender; Dave T. Reid; Vihar P. Georgiev; Campbell Millar; Aida Todri-Sanial; Asen Asenov

doi:10.23919/SISPAD.2017.8085287

Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

Jaehyun Lee
, Jie Liang
, Salvatore M. Amoroso
, Toufik Sadi
, Liping Wang
, Flamen Asenov
, Andrew Pender
, Dave T. Reid
, Vihar P. Georgiev
, Campbell Millar
, Aida Todri-Sanial
, Asen Asenov

Neurotieteen ja lääketieteellisen tekniikan laitos

University of Glasgow
Laboratoire d'informatique, de robotique et de microélectronique de Montpellier
Synopsys Inc.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

3 Sitaatiot (Scopus)

Abstrakti

In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)-based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD simulators to obtain the RC netlists. We then use these RC netlists for the circuit-level simulations to optimize interconnect design in VLSI. Also, we have compared various CNT-based interconnects such as single-walled CNTs, multi-walled CNTs, doped CNTs, and Cu-CNT composites in terms of conductivity, ring oscillator delay, and propagation time delay.

Alkuperäiskieli	Englanti
Otsikko	2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
Kustantaja	IEEE
Sivut	153-156
Sivumäärä	4
ISBN (elektroninen)	9784863486102
DOI - pysyväislinkit	https://doi.org/10.23919/SISPAD.2017.8085287
Tila	Julkaistu - 25 lokak. 2017
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	International Conference on Simulation of Semiconductor Processes and Devices - Kamakura, Japani Kesto: 7 syysk. 2017 → 9 syysk. 2017

Conference

Conference	International Conference on Simulation of Semiconductor Processes and Devices
Lyhennettä	SISPAD
Maa/Alue	Japani
Kaupunki	Kamakura
Ajanjakso	07/09/2017 → 09/09/2017

Pääsy asiakirjaan

10.23919/SISPAD.2017.8085287

http://eprints.gla.ac.uk/147286/

Muut tiedostot ja linkit

Link to publication in Scopus

Siteeraa tätä

Lee, J., Liang, J., Amoroso, S. M., Sadi, T., Wang, L., Asenov, F., Pender, A., Reid, D. T., Georgiev, V. P., Millar, C., Todri-Sanial, A., & Asenov, A. (2017). Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology. teoksessa 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 (Sivut 153-156). Artikkeli 8085287 IEEE. https://doi.org/10.23919/SISPAD.2017.8085287

@inproceedings{5133bc644a0f4cedbc272960c8ed2ac5,

title = "Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology",

abstract = "In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)-based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD simulators to obtain the RC netlists. We then use these RC netlists for the circuit-level simulations to optimize interconnect design in VLSI. Also, we have compared various CNT-based interconnects such as single-walled CNTs, multi-walled CNTs, doped CNTs, and Cu-CNT composites in terms of conductivity, ring oscillator delay, and propagation time delay.",

keywords = "carbon nanotubes (CNTs), circuit simulation, Cu-CNT composites, Density Functional Theory (DFT), hierarchical models, interconnects",

author = "Jaehyun Lee and Jie Liang and Amoroso, \{Salvatore M.\} and Toufik Sadi and Liping Wang and Flamen Asenov and Andrew Pender and Reid, \{Dave T.\} and Georgiev, \{Vihar P.\} and Campbell Millar and Aida Todri-Sanial and Asen Asenov",

year = "2017",

month = oct,

day = "25",

doi = "10.23919/SISPAD.2017.8085287",

language = "English",

pages = "153--156",

booktitle = "2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017",

publisher = "IEEE",

address = "United States",

note = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD ; Conference date: 07-09-2017 Through 09-09-2017",

}

Lee, J, Liang, J, Amoroso, SM, Sadi, T, Wang, L, Asenov, F, Pender, A, Reid, DT, Georgiev, VP, Millar, C, Todri-Sanial, A & Asenov, A 2017, Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology. julkaisussa 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017., 8085287, IEEE, Sivut 153-156, International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japani, 07/09/2017. https://doi.org/10.23919/SISPAD.2017.8085287

Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology. / Lee, Jaehyun; Liang, Jie; Amoroso, Salvatore M. et al.
2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. IEEE, 2017. s. 153-156 8085287.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

AU - Lee, Jaehyun

AU - Liang, Jie

AU - Amoroso, Salvatore M.

AU - Sadi, Toufik

AU - Wang, Liping

AU - Asenov, Flamen

AU - Pender, Andrew

AU - Reid, Dave T.

AU - Georgiev, Vihar P.

AU - Millar, Campbell

AU - Todri-Sanial, Aida

AU - Asenov, Asen

PY - 2017/10/25

Y1 - 2017/10/25

N2 - In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)-based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD simulators to obtain the RC netlists. We then use these RC netlists for the circuit-level simulations to optimize interconnect design in VLSI. Also, we have compared various CNT-based interconnects such as single-walled CNTs, multi-walled CNTs, doped CNTs, and Cu-CNT composites in terms of conductivity, ring oscillator delay, and propagation time delay.

AB - In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)-based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD simulators to obtain the RC netlists. We then use these RC netlists for the circuit-level simulations to optimize interconnect design in VLSI. Also, we have compared various CNT-based interconnects such as single-walled CNTs, multi-walled CNTs, doped CNTs, and Cu-CNT composites in terms of conductivity, ring oscillator delay, and propagation time delay.

KW - carbon nanotubes (CNTs)

KW - circuit simulation

KW - Cu-CNT composites

KW - Density Functional Theory (DFT)

KW - hierarchical models

KW - interconnects

UR - https://www.scopus.com/pages/publications/85039058243

U2 - 10.23919/SISPAD.2017.8085287

DO - 10.23919/SISPAD.2017.8085287

M3 - Conference article in proceedings

AN - SCOPUS:85039058243

SP - 153

EP - 156

BT - 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017

PB - IEEE

T2 - International Conference on Simulation of Semiconductor Processes and Devices

Y2 - 7 September 2017 through 9 September 2017

ER -

Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

Abstrakti

Conference

Pääsy asiakirjaan

Muut tiedostot ja linkit

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