TY - JOUR
T1 - Atom’s Dynamics and Crystal Structure: An Ordinal Pattern Method
AU - Abram, Rafał
AU - Nowak, Roman
AU - Chrobak, Dariusz
N1 - Our simulations used resources provided by the CSC-IT Centre for Science, Finland, which we gratefully acknowledge. RN expresses appreciation to Prof. Koichi Niihara (Nagaoka University of Technology), Prof. Tohru Sekino (Osaka University), as well as Prof. Toshihiro Shimada (Hokkaido University) for their long-standing support with computational modeling of ceramics and semiconductors. He thanks for the visiting scholar opportunities, offered by the Institute of Scientific and Industrial Research, Osaka University. DC gratefully acknowledge support from the European Union within the programme “The European Funds for Śląsk (Silesia) 2021-2027”.
PY - 2025/1/30
Y1 - 2025/1/30
N2 - The ubiquitous nature of thermal fluctuations poses a limitation on the identification of crystal structures. However, the trajectory of an atom carries a fingerprint of its surroundings. This rationalizes the search for a method that can determine the local atomic configuration via the analysis of the movement of an individual atom. Here, we report, while using molecular modeling, how a statistical analysis of a single-atom speed trajectory, represented by ordinal patterns, distinguishes between actual crystal structures. Using the Shannon entropy of ordinal patterns enabled discernment of the studied high-pressure silicon phases. Identification of the atoms occupying the 2(c) and 6(f) Wyckoff positions of the r8 crystal revealed an increase in the developed method’s accuracy with trajectory length. The proposed concept of studying the structure of crystals offers new opportunities in solid-solid phase transformation studies.
AB - The ubiquitous nature of thermal fluctuations poses a limitation on the identification of crystal structures. However, the trajectory of an atom carries a fingerprint of its surroundings. This rationalizes the search for a method that can determine the local atomic configuration via the analysis of the movement of an individual atom. Here, we report, while using molecular modeling, how a statistical analysis of a single-atom speed trajectory, represented by ordinal patterns, distinguishes between actual crystal structures. Using the Shannon entropy of ordinal patterns enabled discernment of the studied high-pressure silicon phases. Identification of the atoms occupying the 2(c) and 6(f) Wyckoff positions of the r8 crystal revealed an increase in the developed method’s accuracy with trajectory length. The proposed concept of studying the structure of crystals offers new opportunities in solid-solid phase transformation studies.
UR - http://www.scopus.com/inward/record.url?scp=85215540426&partnerID=8YFLogxK
U2 - 10.1021/acs.jpca.4c06151
DO - 10.1021/acs.jpca.4c06151
M3 - Article
AN - SCOPUS:85215540426
SN - 1089-5639
VL - 129
SP - 1136
EP - 1142
JO - Journal of Physical Chemistry A
JF - Journal of Physical Chemistry A
IS - 4
ER -