Atomic/molecular layer deposited crystalline metal-organic thin films based on low-valent metals

Jenna Multia

Atomic/molecular layer deposited crystalline metal-organic thin films based on low-valent metals

Julkaisun otsikon käännös: Alhaisen valenssin metalleihin perustuvat kiteiset metalliorgaaniset ohutkalvot atomi/molekyylikerroskasvatuksella

Jenna Multia

Tutkimustuotos: Doctoral Thesis › Collection of Articles

Abstrakti

Kiteiset metalliorgaaniset ohutkalvot tarjoavat lupaavia ratkaisuja erilaisiin pienelektroniikan, antureiden, energian varastoinnin, kaasujen talteenoton ja älykkäiden materiaalien tarpeisiin. Puolijohdeteollisuus on jo pitkään käyttänyt ohutkalvojen atomikerroskasvatusta (atomic layer deposition, ALD) sovelluksissa, joissa vaaditaan ultraohuita ja korkealaatuisia ohutkalvoja vaativilla pinnoilla. ALD-menetelmän etuna on ohutkalvon kasvun kontrolloitavuus atomikerroksen tarkkuudella sekä syntyvän pinnoitteen tasalaatuisuus suurilla ja pinnan muodoiltaan monimutkaisilla kasvualustoilla. Nanomittakaavaisten laitteiden koko potentiaalin hyödyntäminen edellyttää kuitenkin tutkimuksia monimutkaisemmista ohutkalvomateriaaleista. Yhdistämällä metalli-ioneihin orgaanisia molekyylejä ohutkalvomuodossa atomi/molekyylikerroskasvatusmenetelmällä (atomic/molecular layer deposition, ALD/MLD) voidaan saavuttaa ainutlaatuisia fysikaalisia tai kemiallisia ominaisuuksia. Tässä väitöskirjatyössä tutkittiin 19 erilaista alhaisen hapetusluvun metalleihin ja orgaanisiin aromaattisiin molekyyleihin perustuvaa ALD/MLD-prosessia. Kaikkein tärkeimpänä tuloksena työssä pystyttiin näyttämään, että ALD/MLD-menetelmän avulla on mahdollista valmistaa suoraan kaasumaisista lähtöaineista erilaisia kiteisiä metalliorgaanisia materiaaleja, ja jopa sellaisia, joita ei aiemmin ole valmistettu millään muulla menetelmällä. Tutkimus antoi myös arvokkaita suuntaviivoja tällaisten ALD/MLD-prosessien suunnitteluun: metallilähtöaineet, joissa ligandeja on vähän ja/tai ligandit ovat kooltaan pieniä edesauttavat kalvon kiteytymistä. Toinen sovellusten kannalta merkittävä havainto oli, että osa ALD/MLD-menetelmällä löydetyistä kiteisistä metalliorgaanisista materiaaleista voi toimia vierasmatriisirakenteina ja isännöidä interkaloituneita metalli-ioneja tai reversiibelisti adsorboida vesimolekyylejä muuttamatta peruskiderakennettaan. Tällä hetkellä on jo 50 alkuperäistä ALD/MLD-julkaisua, joissa ohutkalvorakenne kasvaa kiteisesti tai voidaan kiteyttää kasvatuksen jälkeen. Koska metalliorgaanisten ohutkalvojen tutkimus on vasta alussa, ALD/MLD-menetelmä tarjoaa runsaasti mahdollisuuksia uusien toiminnallisten ohutkalvojen kehittämiseen.

Julkaisun otsikon käännös	Alhaisen valenssin metalleihin perustuvat kiteiset metalliorgaaniset ohutkalvot atomi/molekyylikerroskasvatuksella
Alkuperäiskieli	Englanti
Pätevyys	Tohtorintutkinto
Myöntävä instituutio	Aalto-yliopisto
Valvoja/neuvonantaja	Karppinen, Maarit, Vastuuprofessori
Kustantaja	Aalto University
Painoksen ISBN	978-952-64-1264-1
Sähköinen ISBN	978-952-64-1265-8
Tila	Julkaistu - 2023
OKM-julkaisutyyppi	G5 Artikkeliväitöskirja

Tutkimusalat

atomi/molekyylikerroskasvatus
metalliorgaaninen runkorakenne
ohutkalvo
s-lohkon metalli

Pääsy asiakirjaan

http://urn.fi/URN:ISBN:978-952-64-1265-8

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@phdthesis{f79532acf0fa4af4b99d79fbcaba3553,

title = "Atomic/molecular layer deposited crystalline metal-organic thin films based on low-valent metals",

abstract = "Crystalline metal-organic thin films offer promising solutions for the diverse needs of miniature electronic devices, requiring functional or smart materials for sensing, energy storage, or gas capture. The semiconductor industry has widely employed atomic layer deposition (ALD) of thin films in applications that require ultra-thin and high-quality coatings on demanding surfaces. The advantage of the ALD method is the controllability of the thin film growth with atomic-level precision, as well as the uniformity of the resulting coating on large and complex structures. However, with the goal of continuously improving the performances of nanoscale devices, studies on more complex thin-film materials are needed. Thin-film materials with unique physical or chemical properties can be achieved by combining the organic linking molecules and metal counterparts, which is possible by atomic/molecular layer deposition (ALD/MLD). In this thesis, 19 different ALD/MLD processes based on low-valent metals together with aromatic organic counterparts were studied. The most important finding was that the ALD/MLD technique can be used to directly produce a variety of in-situ crystalline metal-organic thin-film materials, including materials that have not been previously fabricated by any other method. The research also provides valuable insight for designing such ALD/MLD processes: metal precursors with fewer and smaller ligands can promote the formation of an in-situ crystalline thin-film structure. A significant observation from the application point of view was that some of the in-situ crystalline thin-film structures discovered by the ALD/MLD technique can serve as guest-matrix structures and host intercalated metal ions or reversibly adsorb water molecules without disrupting the fundamental crystal structure. Currently, there are already 50 original ALD/MLD publications where thin-film structures show either in-situ or post-deposition treated crystallinity. Since the field of metal-organic thin films is still in its early stage, the ALD/MLD technique offers plenty of possibilities for developing novel and functional thin films.",

keywords = "atomic/molecular layer deposition, metal-organic framework, s-block metal, thin film, atomi/molekyylikerroskasvatus, metalliorgaaninen runkorakenne, ohutkalvo, s-lohkon metalli, atomic/molecular layer deposition, metal-organic framework, s-block metal, thin film",

author = "Jenna Multia",

year = "2023",

language = "English",

isbn = "978-952-64-1264-1",

series = "Aalto University publication series DOCTORAL THESES",

publisher = "Aalto University",

number = "69",

address = "Finland",

school = "Aalto University",

}

TY - BOOK

T1 - Atomic/molecular layer deposited crystalline metal-organic thin films based on low-valent metals

AU - Multia, Jenna

PY - 2023

Y1 - 2023

N2 - Crystalline metal-organic thin films offer promising solutions for the diverse needs of miniature electronic devices, requiring functional or smart materials for sensing, energy storage, or gas capture. The semiconductor industry has widely employed atomic layer deposition (ALD) of thin films in applications that require ultra-thin and high-quality coatings on demanding surfaces. The advantage of the ALD method is the controllability of the thin film growth with atomic-level precision, as well as the uniformity of the resulting coating on large and complex structures. However, with the goal of continuously improving the performances of nanoscale devices, studies on more complex thin-film materials are needed. Thin-film materials with unique physical or chemical properties can be achieved by combining the organic linking molecules and metal counterparts, which is possible by atomic/molecular layer deposition (ALD/MLD). In this thesis, 19 different ALD/MLD processes based on low-valent metals together with aromatic organic counterparts were studied. The most important finding was that the ALD/MLD technique can be used to directly produce a variety of in-situ crystalline metal-organic thin-film materials, including materials that have not been previously fabricated by any other method. The research also provides valuable insight for designing such ALD/MLD processes: metal precursors with fewer and smaller ligands can promote the formation of an in-situ crystalline thin-film structure. A significant observation from the application point of view was that some of the in-situ crystalline thin-film structures discovered by the ALD/MLD technique can serve as guest-matrix structures and host intercalated metal ions or reversibly adsorb water molecules without disrupting the fundamental crystal structure. Currently, there are already 50 original ALD/MLD publications where thin-film structures show either in-situ or post-deposition treated crystallinity. Since the field of metal-organic thin films is still in its early stage, the ALD/MLD technique offers plenty of possibilities for developing novel and functional thin films.

AB - Crystalline metal-organic thin films offer promising solutions for the diverse needs of miniature electronic devices, requiring functional or smart materials for sensing, energy storage, or gas capture. The semiconductor industry has widely employed atomic layer deposition (ALD) of thin films in applications that require ultra-thin and high-quality coatings on demanding surfaces. The advantage of the ALD method is the controllability of the thin film growth with atomic-level precision, as well as the uniformity of the resulting coating on large and complex structures. However, with the goal of continuously improving the performances of nanoscale devices, studies on more complex thin-film materials are needed. Thin-film materials with unique physical or chemical properties can be achieved by combining the organic linking molecules and metal counterparts, which is possible by atomic/molecular layer deposition (ALD/MLD). In this thesis, 19 different ALD/MLD processes based on low-valent metals together with aromatic organic counterparts were studied. The most important finding was that the ALD/MLD technique can be used to directly produce a variety of in-situ crystalline metal-organic thin-film materials, including materials that have not been previously fabricated by any other method. The research also provides valuable insight for designing such ALD/MLD processes: metal precursors with fewer and smaller ligands can promote the formation of an in-situ crystalline thin-film structure. A significant observation from the application point of view was that some of the in-situ crystalline thin-film structures discovered by the ALD/MLD technique can serve as guest-matrix structures and host intercalated metal ions or reversibly adsorb water molecules without disrupting the fundamental crystal structure. Currently, there are already 50 original ALD/MLD publications where thin-film structures show either in-situ or post-deposition treated crystallinity. Since the field of metal-organic thin films is still in its early stage, the ALD/MLD technique offers plenty of possibilities for developing novel and functional thin films.

KW - atomic/molecular layer deposition

KW - metal-organic framework

KW - s-block metal

KW - thin film

KW - atomi/molekyylikerroskasvatus

KW - metalliorgaaninen runkorakenne

KW - ohutkalvo

KW - s-lohkon metalli

KW - atomic/molecular layer deposition

KW - metal-organic framework

KW - s-block metal

KW - thin film

M3 - Doctoral Thesis

SN - 978-952-64-1264-1

T3 - Aalto University publication series DOCTORAL THESES

PB - Aalto University

ER -

Atomic/molecular layer deposited crystalline metal-organic thin films based on low-valent metals

Abstrakti

Tutkimusalat

Pääsy asiakirjaan

Sormenjälki

Laitteet

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