Atomic layer deposition of Zr-sandwiched ZnO thin films for transparent thermoelectrics

Tomi Koskinen*, Ulrika Volin, Camilla Tossi, Ramesh Raju, Ilkka Tittonen

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

39 Lataukset (Pure)


Atomic layer deposited (ALD) transparent thermoelectric materials enable the introduction of energy harvesting and sensing devices onto surfaces of various shapes and sizes in imperceptible manner. Amongst these materials, ZnO has shown promising results in terms of both thermoelectric and optical characteristics. The thermoelectric performance of ZnO can be further optimized by introducing extrinsic doping, to the realization of which ALD provides excellent control. Here, we explore the effects of sandwiching of ZrO2 layers with ZnO on glass substrates. The room-temperature thermoelectric power factor is maximised at 116μW m−1 K−2 with samples containing a 2% nominal percentage of ZrO2. The addition of ZrO2 layers is further shown to reduce the thermal conductivity, resulting in a 20.2% decrease from the undoped ZnO at 2% doping. Our results contribute to increasing the understanding of the effects of Zr inclusion in structural properties and growth of ALD ZnO, as well as the thermal and thermoelectric properties of Zr-doped ZnO films in general.

DOI - pysyväislinkit
TilaJulkaistu - 15 tammik. 2023
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu


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