Atomic Defects and Doping of Monolayer NbSe2

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • Lan Nguyen
  • Hannu-Pekka Komsa

  • Ekaterina Khestanova
  • Reza J. Kashtiban
  • Jonathan J P Peters
  • Sean Lawlor
  • Ana M. Sanchez
  • Jeremy Sloan
  • Roman V. Gorbachev
  • Irina V. Grigorieva
  • Arkady Krasheninnikov

  • Sarah J. Haigh

Organisaatiot

  • University of Manchester
  • Institute of Ion Beam Physics and Materials Research
  • National University of Science and Technology "MISiS"
  • University of Warwick

Kuvaus

We have investigated the structure of atomic defects within monolayer NbSe2 encapsulated in graphene by combining atomic resolution transmission electron microscope imaging, density functional theory (DFT) calculations, and strain mapping using geometric phase analysis. We demonstrate the presence of stable Nb and Se monovacancies in monolayer material and reveal that Se monovacancies are the most frequently observed defects, consistent with DFT calculations of their formation energy. We reveal that adventitious impurities of C, N, and O can substitute into the NbSe2 lattice stabilizing Se divacancies. We further observe evidence of Pt substitution into both Se and Nb vacancy sites. This knowledge of the character and relative frequency of different atomic defects provides the potential to better understand and control the unusual electronic and magnetic properties of this exciting two-dimensional material.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut2894-2904
Sivumäärä11
JulkaisuACS Nano
Vuosikerta11
Numero3
TilaJulkaistu - 28 maaliskuuta 2017
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 11609263