Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

C. Medina-Bailon; T. Sadi; C. Sampedro; J. L. Padilla; A. Godoy; L. Donetti; V. Georgiev; F. Gamiz; A. Asenov

doi:10.1109/ULIS.2017.7962585

Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

C. Medina-Bailon^*, T. Sadi, C. Sampedro, J. L. Padilla, A. Godoy, L. Donetti, V. Georgiev, F. Gamiz, A. Asenov

^*Tämän työn vastaava kirjoittaja

Ei julkaistu Aalto-yliopiston affiliaatiolla

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference contribution › Scientific › vertaisarvioitu

4 Sitaatiot (Scopus)

Abstrakti

The inclusion in advanced device simulators of quantum effects different than standard confinement becomes mandatory to describe device behavior as technology approaches the nanometer scales. This work presents a model to include the gate leakage mechanism considering direct and trap assisted tunneling in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators. The tool is used for the study of FDSOI and FinFET devices.

Alkuperäiskieli	Englanti
Otsikko	Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
Toimittajat	Androula G. Nassiopoulou, Panagiotis Sarafis
Kustantaja	IEEE
Sivut	144-147
Sivumäärä	4
ISBN (elektroninen)	9781509053131
DOI - pysyväislinkit	https://doi.org/10.1109/ULIS.2017.7962585
Tila	Julkaistu - 29 kesäkuuta 2017
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisuussa
Tapahtuma	Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS - Athens, Kreikka Kesto: 3 huhtikuuta 2017 → 5 huhtikuuta 2017

Conference

Conference	Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS
Lyhennettä	EUROSOI-ULIS
Maa	Kreikka
Kaupunki	Athens
Ajanjakso	03/04/2017 → 05/04/2017

Pääsy asiakirjaan

10.1109/ULIS.2017.7962585

Link to publication in Scopus

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Siteeraa tätä

Medina-Bailon, C., Sadi, T., Sampedro, C., Padilla, J. L., Godoy, A., Donetti, L., Georgiev, V., Gamiz, F., & Asenov, A. (2017). Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo. teoksessa A. G. Nassiopoulou, & P. Sarafis (Toimittajat), Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings (Sivut 144-147). [7962585] IEEE. https://doi.org/10.1109/ULIS.2017.7962585

Medina-Bailon, C. ; Sadi, T. ; Sampedro, C. ; Padilla, J. L. ; Godoy, A. ; Donetti, L. ; Georgiev, V. ; Gamiz, F. ; Asenov, A. / Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo. Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings. Toimittaja / Androula G. Nassiopoulou ; Panagiotis Sarafis. IEEE, 2017. Sivut 144-147

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title = "Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo",

abstract = "The inclusion in advanced device simulators of quantum effects different than standard confinement becomes mandatory to describe device behavior as technology approaches the nanometer scales. This work presents a model to include the gate leakage mechanism considering direct and trap assisted tunneling in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators. The tool is used for the study of FDSOI and FinFET devices.",

keywords = "direct tunneling, FDSOI, FinFET, gate leakage mechanism, MS-EMC, trap assisted tunneling",

author = "C. Medina-Bailon and T. Sadi and C. Sampedro and Padilla, {J. L.} and A. Godoy and L. Donetti and V. Georgiev and F. Gamiz and A. Asenov",

year = "2017",

month = jun,

day = "29",

doi = "10.1109/ULIS.2017.7962585",

language = "English",

pages = "144--147",

editor = "Nassiopoulou, {Androula G.} and Panagiotis Sarafis",

booktitle = "Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings",

publisher = "IEEE",

address = "United States",

note = "Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS ; Conference date: 03-04-2017 Through 05-04-2017",

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Medina-Bailon, C, Sadi, T, Sampedro, C, Padilla, JL, Godoy, A, Donetti, L, Georgiev, V, Gamiz, F & Asenov, A 2017, Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo. julkaisussa AG Nassiopoulou & P Sarafis (toim), Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings., 7962585, IEEE, Sivut 144-147, Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, Athens, Kreikka, 03/04/2017. https://doi.org/10.1109/ULIS.2017.7962585

Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo. / Medina-Bailon, C.; Sadi, T.; Sampedro, C.; Padilla, J. L.; Godoy, A.; Donetti, L.; Georgiev, V.; Gamiz, F.; Asenov, A.

Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings. toim. / Androula G. Nassiopoulou; Panagiotis Sarafis. IEEE, 2017. s. 144-147 7962585.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference contribution › Scientific › vertaisarvioitu

TY - GEN

T1 - Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

AU - Medina-Bailon, C.

AU - Sadi, T.

AU - Sampedro, C.

AU - Padilla, J. L.

AU - Godoy, A.

AU - Donetti, L.

AU - Georgiev, V.

AU - Gamiz, F.

AU - Asenov, A.

PY - 2017/6/29

Y1 - 2017/6/29

N2 - The inclusion in advanced device simulators of quantum effects different than standard confinement becomes mandatory to describe device behavior as technology approaches the nanometer scales. This work presents a model to include the gate leakage mechanism considering direct and trap assisted tunneling in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators. The tool is used for the study of FDSOI and FinFET devices.

AB - The inclusion in advanced device simulators of quantum effects different than standard confinement becomes mandatory to describe device behavior as technology approaches the nanometer scales. This work presents a model to include the gate leakage mechanism considering direct and trap assisted tunneling in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators. The tool is used for the study of FDSOI and FinFET devices.

KW - direct tunneling

KW - FDSOI

KW - FinFET

KW - gate leakage mechanism

KW - MS-EMC

KW - trap assisted tunneling

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DO - 10.1109/ULIS.2017.7962585

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BT - Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

A2 - Nassiopoulou, Androula G.

A2 - Sarafis, Panagiotis

PB - IEEE

T2 - Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS

Y2 - 3 April 2017 through 5 April 2017

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Medina-Bailon C, Sadi T, Sampedro C, Padilla JL, Godoy A, Donetti L et al. Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo. julkaisussa Nassiopoulou AG, Sarafis P, toimittajat, Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings. IEEE. 2017. s. 144-147. 7962585 https://doi.org/10.1109/ULIS.2017.7962585