Approaching Truly Freestanding Graphene: The Structure of Hydrogen-Intercalated Graphene on 6H-SiC(0001)

J. Sforzini, L. Nemec, T. Denig, B. Stadtmüller, T.-L. Lee, C. Kumpf, S. Soubatch, U. Starke, Patrick Rinke, V. Blum, F.C. Bocquet, F.S. Tautz

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

60 Sitaatiot (Scopus)
312 Lataukset (Pure)


We measure the adsorption height of hydrogen-intercalated quasifreestanding monolayer graphene on the (0001) face of 6H silicon carbide by the normal incidence x-ray standing wave technique. A density functional calculation for the full (63√×63√)−R30° unit cell, based on a van der Waals corrected exchange correlation functional, finds a purely physisorptive adsorption height in excellent agreement with experiments, a very low buckling of the graphene layer, a very homogeneous electron density at the interface, and the lowest known adsorption energy per atom for graphene on any substrate. A structural comparison to other graphenes suggests that hydrogen-intercalated graphene on 6H−SiC(0001) approaches ideal graphene.
JulkaisuPhysical Review Letters
DOI - pysyväislinkit
TilaJulkaistu - 2015
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu


  • DFT
  • graphene
  • intercalated
  • silicon carbide
  • x-ray standing wave


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