Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes

P. McNally, P. Herbert, T. Tuomi, M. Karilahti, J. Higgins

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

6 Sitaatiot (Scopus)

Alkuperäiskieli	Englanti
Sivut	8294-8297
Julkaisu	Journal of Physics D: Applied Physics
Vuosikerta	79
Tila	Julkaistu - 1996
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Tutkimusalat

@article{675198e60f8b49e3a352b7d7fe0e0961,

title = "Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes",

keywords = "optoelectronics, semiconductors, optoelectronics, semiconductors, optoelectronics, semiconductors",

author = "P. McNally and P. Herbert and T. Tuomi and M. Karilahti and J. Higgins",

year = "1996",

language = "English",

volume = "79",

pages = "8294--8297",

journal = "Journal of Physics D: Applied Physics",

publisher = "Institute of Physics Publishing ",

}

TY - JOUR

T1 - Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes

AU - McNally, P.

AU - Herbert, P.

AU - Tuomi, T.

AU - Karilahti, M.

AU - Higgins, J.

PY - 1996

Y1 - 1996

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

M3 - Article

VL - 79

SP - 8294

EP - 8297

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

ER -