Abstrakti
The substrate-inhibited growth in the hafnium tetrachloride (HfCL 4)/water (H2O) atomic layer deposition (ALD) process was studied with two models of ALD. The growth-per-cycle (GPC) of substrate-inhibited (SI)-ALD, increased in the beginning and reached a constant value during the growth process. The chemical basis of modeling were formed by the ligand exchange reaction of hafnium tetrachloride with one surface hydroxyl (OH) group. The steric hinderance in ALD was evaluatevaluated using model A and C.
Alkuperäiskieli | Englanti |
---|---|
Sivut | 4777-4786 |
Sivumäärä | 10 |
Julkaisu | Journal of Applied Physics |
Vuosikerta | 95 |
Numero | 9 |
DOI - pysyväislinkit | |
Tila | Julkaistu - 1 toukok. 2004 |
OKM-julkaisutyyppi | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä |