Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • Ioffe Institute
  • ITMO University

Kuvaus

This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli012228
JulkaisuJournal of Physics: Conference Series
Vuosikerta1410
Numero1
TilaJulkaistu - 2019
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaInternational School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures - Saint Petersburg, Venäjä
Kesto: 22 huhtikuuta 201925 huhtikuuta 2019
Konferenssinumero: 6

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