Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy

B R Borodin; P A Alekseev; M S Dunaevskiy; V Khayrudinov; H Lipsanen

doi:10.1088/1742-6596/1410/1/012228

Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy

B R Borodin, P A Alekseev, M S Dunaevskiy, V Khayrudinov, H Lipsanen

Tutkimustuotos: Lehtiartikkeli › Conference article › Scientific › vertaisarvioitu

62 Lataukset (Pure)

Abstrakti

This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.

Alkuperäiskieli	Englanti
Artikkeli	012228
Julkaisu	Journal of Physics: Conference Series
Vuosikerta	1410
Numero	1
DOI - pysyväislinkit	https://doi.org/10.1088/1742-6596/1410/1/012228
Tila	Julkaistu - 2019
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures - Saint Petersburg, Venäjä Kesto: 22 huhtik. 2019 → 25 huhtik. 2019 Konferenssinumero: 6

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10.1088/1742-6596/1410/1/012228Lisenssi: CC BY

Borodin_2019_J._Phys.__Conf._Ser._1410_012228Final published version, 772 KBLisenssi: CC BY

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title = "Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy",

abstract = "This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.",

author = "Borodin, {B R} and Alekseev, {P A} and Dunaevskiy, {M S} and V Khayrudinov and H Lipsanen",

year = "2019",

doi = "10.1088/1742-6596/1410/1/012228",

language = "English",

volume = "1410",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "Institute of Physics Publishing",

number = "1",

note = "International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPBOPEN ; Conference date: 22-04-2019 Through 25-04-2019",

}

TY - JOUR

T1 - Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy

AU - Borodin, B R

AU - Alekseev, P A

AU - Dunaevskiy, M S

AU - Khayrudinov, V

AU - Lipsanen, H

N1 - Conference code: 6

PY - 2019

Y1 - 2019

N2 - This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.

AB - This work presents the results of an investigation of in plane horizontal GaAs nanowires by Scanning Probe Microscopy (SPM) methods. Topography and a local conductivity map of the horizontal nanowire with axial p-n junction are obtained. The distribution of doping and position of p-n junctions in nanowires are visualized. The I-V curves of differently doped parts of nanowires were measured. These data can be important for the understanding of the doping incorporation mechanism of GaAs nanowires.

U2 - 10.1088/1742-6596/1410/1/012228

DO - 10.1088/1742-6596/1410/1/012228

M3 - Conference article

SN - 1742-6588

VL - 1410

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012228

T2 - International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures

Y2 - 22 April 2019 through 25 April 2019

ER -

Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy

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