Analysis of dislocations generated during metal-organic vapor phase epitaxy of GaN on patterned templates

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • RAS - Ioffe Physico Technical Institute

Kuvaus

We report on patterning and subsequent metal-organic vapor phase epitaxy overgrowth of GaN films on patterned GaN/sapphire templates. Templates with a hexagonal hole pattern were prepared by photolithography and dry etching. After GaN overgrowth voids were formed at the GaN/sapphire interface. Threading dislocations were found to bend and terminate at void sidewalls during the overgrowth resulting in improved material quality. The dislocations were analyzed by transmission electron microscopy combined with energy dispersive X-ray spectroscopy. Areas with increased Ga concentration were found at the tips of coalesced voids that introduced additional dislocations to the overgrown films.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli01AF01
Sivut1-3
Sivumäärä3
JulkaisuJapanese Journal of Applied Physics
Vuosikerta52
Numero1S
TilaJulkaistu - tammikuuta 2013
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 4219192