An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • Ph.D. Hongwei Tan

  • Gang Liu
  • Xiaojian Zhu
  • Huali Yang
  • Bin Chen
  • Xinxin Chen
  • Jie Shang
  • Wei D. Lu
  • Yihong Wu
  • Run-Wei Li

Organisaatiot

  • Chinese Acad Sci, Chinese Academy of Sciences, Ningbo Institute of Materials Technology and Engineering, CAS, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn
  • Univ Michigan, University of Michigan System, University of Michigan, Dept Elect Engn & Comp Sci
  • Natl Univ Singapore, National University of Singapore, Dept Elect & Comp Engn, Informat Storage Mat Lab

Kuvaus

A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2-x/AlOy/Al structure, is demonstrated. Arising from the photoinduced detrapping, electrode-injection and retrapping of electrons in the CeO2-x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut2797-2803
Sivumäärä7
JulkaisuAdvanced Materials
Vuosikerta27
Numero17
TilaJulkaistu - 6 toukokuuta 2015
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 37482835