An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • Optogan Oy
  • RAS - Ioffe Physico Technical Institute

Kuvaus

GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface. © 2009 Elsevier B.V. All rights reserved.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut4911-4915
Sivumäärä5
JulkaisuPhysica B: Condensed Matter
Vuosikerta404
Numero23-24
TilaJulkaistu - 15 joulukuuta 2009
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 3598765