An E-band Bidirectional PALNA in 0.13 μm SiGe BiCMOS Technology

R. Ahamed; M. Varonen; D. Parveg; M. Najmussadat; M. Kantanen; Y. Tawfik; K. A.I. Halonen

doi:10.23919/EuMIC50153.2022.9783945

An E-band Bidirectional PALNA in 0.13 μm SiGe BiCMOS Technology

R. Ahamed, M. Varonen, D. Parveg, M. Najmussadat, M. Kantanen, Y. Tawfik, K. A.I. Halonen

VTT Technical Research Centre of Finland Ltd.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference contribution › Scientific › vertaisarvioitu

Abstrakti

This paper presents an E-band bidirectional power amplifier and low-noise amplifier (PALNA) in a 0.13 μm SiGe BiCMOS technology. In the transmit mode, the LNA is isolated through the impedance matching network with enabler setting. In the receive mode, the input of the PA is isolated by matching network with enabler setting while the output of the PA is isolated by a differential switch to have minimal effect on the noise figure (NF) and input matching of the LNA. The measured PALNA achieves a peak gain of 24.3 dB at 72 GHz with a 3 dB bandwidth from 64 GHz to 85 GHz in the receive mode. The measured NF is 5.8 dB at 74 GHz. In the transmit mode, the differential PA results in 19.5 dB peak gain at 76 GHz and +9.2 dBm of saturated power at 74 GHz. The overall chip size is 1.25 mm2. The PALNA consumes a DC power of 19 mW and 131 mW in the receive and transmit mode, respectively. The designed bidirectional PALNA is suitable for a half-duplex system with shared Tx/Rx antenna.

Alkuperäiskieli	Englanti
Otsikko	EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference
Kustantaja	IEEE
Sivut	281-284
Sivumäärä	4
ISBN (elektroninen)	978-2-87487-064-4
DOI - pysyväislinkit	https://doi.org/10.23919/EuMIC50153.2022.9783945
Tila	Julkaistu - 2021
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisuussa
Tapahtuma	European Microwave Integrated Circuits Conference - London, Iso-Britannia Kesto: 3 huhtik. 2022 → 4 huhtik. 2022 Konferenssinumero: 16

Conference

Conference	European Microwave Integrated Circuits Conference
Lyhennettä	EuMIC
Maa/Alue	Iso-Britannia
Kaupunki	London
Ajanjakso	03/04/2022 → 04/04/2022

Pääsy asiakirjaan

10.23919/EuMIC50153.2022.9783945

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Koko teksti

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Linkki julkaisuun Scopuksessa

TeraCom: Kiekkotasolla integroitu THz kommunikaatiolinkki
Halonen, K., Ahamed, R., Monga, D., Singh, G., Tawfik, Y., Tanweer, M., Najmussadat, M., Stadius, K. & Numan, O.
01/01/2019 → 30/06/2022
Projekti: Academy of Finland: Other research funding

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@inproceedings{54c815eb98f6482ebd5cc8e21b45a73d,

title = "An E-band Bidirectional PALNA in 0.13 μm SiGe BiCMOS Technology",

abstract = "This paper presents an E-band bidirectional power amplifier and low-noise amplifier (PALNA) in a 0.13 μm SiGe BiCMOS technology. In the transmit mode, the LNA is isolated through the impedance matching network with enabler setting. In the receive mode, the input of the PA is isolated by matching network with enabler setting while the output of the PA is isolated by a differential switch to have minimal effect on the noise figure (NF) and input matching of the LNA. The measured PALNA achieves a peak gain of 24.3 dB at 72 GHz with a 3 dB bandwidth from 64 GHz to 85 GHz in the receive mode. The measured NF is 5.8 dB at 74 GHz. In the transmit mode, the differential PA results in 19.5 dB peak gain at 76 GHz and +9.2 dBm of saturated power at 74 GHz. The overall chip size is 1.25 mm2. The PALNA consumes a DC power of 19 mW and 131 mW in the receive and transmit mode, respectively. The designed bidirectional PALNA is suitable for a half-duplex system with shared Tx/Rx antenna. ",

keywords = "BiCMOS, bidirectional, E-band, LNA, millimeter-wave, MMIC, PA, PALNA",

author = "R. Ahamed and M. Varonen and D. Parveg and M. Najmussadat and M. Kantanen and Y. Tawfik and Halonen, {K. A.I.}",

note = "Funding Information: ACKNOWLEDGMENT The authors would like to thank the Academy of Finland for supporting this work through TeraCom project. The work of M. Varonen was supported through the Academy of Finland Research Fellow project MIDERI (decision no 310234). Publisher Copyright: {\textcopyright} 2022 European Microwave Association (EuMA).; European Microwave Integrated Circuits Conference, EuMIC ; Conference date: 03-04-2022 Through 04-04-2022",

year = "2021",

doi = "10.23919/EuMIC50153.2022.9783945",

language = "English",

pages = "281--284",

booktitle = "EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference",

publisher = "IEEE",

address = "United States",

}

Ahamed, R, Varonen, M, Parveg, D, Najmussadat, M, Kantanen, M, Tawfik, Y & Halonen, KAI 2021, An E-band Bidirectional PALNA in 0.13 μm SiGe BiCMOS Technology. julkaisussa EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference. IEEE, Sivut 281-284, European Microwave Integrated Circuits Conference, London, Iso-Britannia, 03/04/2022. https://doi.org/10.23919/EuMIC50153.2022.9783945

TY - GEN

T1 - An E-band Bidirectional PALNA in 0.13 μm SiGe BiCMOS Technology

AU - Ahamed, R.

AU - Varonen, M.

AU - Parveg, D.

AU - Najmussadat, M.

AU - Kantanen, M.

AU - Tawfik, Y.

AU - Halonen, K. A.I.

N1 - Conference code: 16

PY - 2021

Y1 - 2021

N2 - This paper presents an E-band bidirectional power amplifier and low-noise amplifier (PALNA) in a 0.13 μm SiGe BiCMOS technology. In the transmit mode, the LNA is isolated through the impedance matching network with enabler setting. In the receive mode, the input of the PA is isolated by matching network with enabler setting while the output of the PA is isolated by a differential switch to have minimal effect on the noise figure (NF) and input matching of the LNA. The measured PALNA achieves a peak gain of 24.3 dB at 72 GHz with a 3 dB bandwidth from 64 GHz to 85 GHz in the receive mode. The measured NF is 5.8 dB at 74 GHz. In the transmit mode, the differential PA results in 19.5 dB peak gain at 76 GHz and +9.2 dBm of saturated power at 74 GHz. The overall chip size is 1.25 mm2. The PALNA consumes a DC power of 19 mW and 131 mW in the receive and transmit mode, respectively. The designed bidirectional PALNA is suitable for a half-duplex system with shared Tx/Rx antenna.

AB - This paper presents an E-band bidirectional power amplifier and low-noise amplifier (PALNA) in a 0.13 μm SiGe BiCMOS technology. In the transmit mode, the LNA is isolated through the impedance matching network with enabler setting. In the receive mode, the input of the PA is isolated by matching network with enabler setting while the output of the PA is isolated by a differential switch to have minimal effect on the noise figure (NF) and input matching of the LNA. The measured PALNA achieves a peak gain of 24.3 dB at 72 GHz with a 3 dB bandwidth from 64 GHz to 85 GHz in the receive mode. The measured NF is 5.8 dB at 74 GHz. In the transmit mode, the differential PA results in 19.5 dB peak gain at 76 GHz and +9.2 dBm of saturated power at 74 GHz. The overall chip size is 1.25 mm2. The PALNA consumes a DC power of 19 mW and 131 mW in the receive and transmit mode, respectively. The designed bidirectional PALNA is suitable for a half-duplex system with shared Tx/Rx antenna.

KW - BiCMOS

KW - bidirectional

KW - E-band

KW - LNA

KW - millimeter-wave

KW - MMIC

KW - PA

KW - PALNA

UR - http://www.scopus.com/inward/record.url?scp=85133029540&partnerID=8YFLogxK

U2 - 10.23919/EuMIC50153.2022.9783945

DO - 10.23919/EuMIC50153.2022.9783945

M3 - Conference contribution

AN - SCOPUS:85133029540

SP - 281

EP - 284

BT - EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference

PB - IEEE

T2 - European Microwave Integrated Circuits Conference

Y2 - 3 April 2022 through 4 April 2022

ER -

An E-band Bidirectional PALNA in 0.13 μm SiGe BiCMOS Technology

Abstrakti

Conference

Pääsy asiakirjaan

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Muut tiedostot ja linkit

Sormenjälki

Projektit

TeraCom: Kiekkotasolla integroitu THz kommunikaatiolinkki

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