Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites

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Amphoteric Be in GaN : Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites. / Tuomisto, Filip; Prozheeva, Vera; Makkonen, Ilja; Myers, Thomas H.; Bockowski, Michal; Teisseyre, Henryk.

julkaisussa: Physical Review Letters, Vuosikerta 119, Nro 19, 196404, 09.11.2017, s. 1-5.

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Tuomisto, Filip ; Prozheeva, Vera ; Makkonen, Ilja ; Myers, Thomas H. ; Bockowski, Michal ; Teisseyre, Henryk. / Amphoteric Be in GaN : Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites. Julkaisussa: Physical Review Letters. 2017 ; Vuosikerta 119, Nro 19. Sivut 1-5.

Bibtex - Lataa

@article{65864950acde4ddaae95e78995ef7dcd,
title = "Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites",
abstract = "We show that Be exhibits amphoteric behavior in GaN, involving switching between substitutional and interstitial positions in the lattice. This behavior is observed through the dominance of BeGa in the positron annihilation signals in Be-doped GaN, while the emergence of VGa at high temperatures is a consequence of the Be impurities being driven to interstitial positions. The similarity of this behavior to that found for Na and Li in ZnO suggests that this could be a universal property of light dopants substituting for heavy cations in compound semiconductors.",
author = "Filip Tuomisto and Vera Prozheeva and Ilja Makkonen and Myers, {Thomas H.} and Michal Bockowski and Henryk Teisseyre",
year = "2017",
month = "11",
day = "9",
doi = "10.1103/PhysRevLett.119.196404",
language = "English",
volume = "119",
pages = "1--5",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "19",

}

RIS - Lataa

TY - JOUR

T1 - Amphoteric Be in GaN

T2 - Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites

AU - Tuomisto, Filip

AU - Prozheeva, Vera

AU - Makkonen, Ilja

AU - Myers, Thomas H.

AU - Bockowski, Michal

AU - Teisseyre, Henryk

PY - 2017/11/9

Y1 - 2017/11/9

N2 - We show that Be exhibits amphoteric behavior in GaN, involving switching between substitutional and interstitial positions in the lattice. This behavior is observed through the dominance of BeGa in the positron annihilation signals in Be-doped GaN, while the emergence of VGa at high temperatures is a consequence of the Be impurities being driven to interstitial positions. The similarity of this behavior to that found for Na and Li in ZnO suggests that this could be a universal property of light dopants substituting for heavy cations in compound semiconductors.

AB - We show that Be exhibits amphoteric behavior in GaN, involving switching between substitutional and interstitial positions in the lattice. This behavior is observed through the dominance of BeGa in the positron annihilation signals in Be-doped GaN, while the emergence of VGa at high temperatures is a consequence of the Be impurities being driven to interstitial positions. The similarity of this behavior to that found for Na and Li in ZnO suggests that this could be a universal property of light dopants substituting for heavy cations in compound semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=85033561274&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.119.196404

DO - 10.1103/PhysRevLett.119.196404

M3 - Article

VL - 119

SP - 1

EP - 5

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 19

M1 - 196404

ER -

ID: 16138627