Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • Filip Tuomisto

  • Vera Prozheeva
  • Ilja Makkonen
  • Thomas H. Myers
  • Michal Bockowski
  • Henryk Teisseyre

Organisaatiot

  • Texas State University
  • Polish Academy of Sciences
  • Institute of Physics of the Polish Academy of Sciences

Kuvaus

We show that Be exhibits amphoteric behavior in GaN, involving switching between substitutional and interstitial positions in the lattice. This behavior is observed through the dominance of BeGa in the positron annihilation signals in Be-doped GaN, while the emergence of VGa at high temperatures is a consequence of the Be impurities being driven to interstitial positions. The similarity of this behavior to that found for Na and Li in ZnO suggests that this could be a universal property of light dopants substituting for heavy cations in compound semiconductors.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli196404
Sivut1-5
JulkaisuPhysical Review Letters
Vuosikerta119
Numero19
TilaJulkaistu - 9 marraskuuta 2017
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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