Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

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Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition : Growth and mechanical properties. / Ylivaara, Oili M E; Kilpi, Lauri; Liu, Xuwen; Sintonen, Sakari; Ali, Saima; Laitinen, Mikko; Julin, Jaakko; Haimi, Eero; Sajavaara, Timo; Lipsanen, Harri; Hannula, Simo Pekka; Ronkainen, Helena; Puurunen, Riikka.

julkaisussa: JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A, Vuosikerta 35, Nro 1, 01B105, 01.01.2017, s. 1-13.

Tutkimustuotos: Lehtiartikkeli

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Ylivaara, Oili M E ; Kilpi, Lauri ; Liu, Xuwen ; Sintonen, Sakari ; Ali, Saima ; Laitinen, Mikko ; Julin, Jaakko ; Haimi, Eero ; Sajavaara, Timo ; Lipsanen, Harri ; Hannula, Simo Pekka ; Ronkainen, Helena ; Puurunen, Riikka. / Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition : Growth and mechanical properties. Julkaisussa: JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A. 2017 ; Vuosikerta 35, Nro 1. Sivut 1-13.

Bibtex - Lataa

@article{d2a520f1a6724cc1bc25c7b697b0ce70,
title = "Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties",
abstract = "Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110-300 °C), film thickness (20-300 nm), bilayer thickness (0.1-100 nm), and TiO2 content (0{\%}-100{\%}). Al2O3 was grown from Me3Al and H2O, and TiO2 from TiCl4 and H2O. According to wafer curvature measurements, Al2O3/TiO2 nanolaminates were under tensile stress; bilayer thickness and growth temperature were the major parameters affecting the stress; the residual stress decreased with increasing bilayer thickness and ALD temperature. Hardness increased with increasing ALD temperature and decreased with increasing TiO2 fraction. Contact modulus remained approximately stable. The adhesion of the nanolaminate film was good on silicon.",
author = "Ylivaara, {Oili M E} and Lauri Kilpi and Xuwen Liu and Sakari Sintonen and Saima Ali and Mikko Laitinen and Jaakko Julin and Eero Haimi and Timo Sajavaara and Harri Lipsanen and Hannula, {Simo Pekka} and Helena Ronkainen and Riikka Puurunen",
year = "2017",
month = "1",
day = "1",
doi = "10.1116/1.4966198",
language = "English",
volume = "35",
pages = "1--13",
journal = "JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "1",

}

RIS - Lataa

TY - JOUR

T1 - Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition

T2 - Growth and mechanical properties

AU - Ylivaara, Oili M E

AU - Kilpi, Lauri

AU - Liu, Xuwen

AU - Sintonen, Sakari

AU - Ali, Saima

AU - Laitinen, Mikko

AU - Julin, Jaakko

AU - Haimi, Eero

AU - Sajavaara, Timo

AU - Lipsanen, Harri

AU - Hannula, Simo Pekka

AU - Ronkainen, Helena

AU - Puurunen, Riikka

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110-300 °C), film thickness (20-300 nm), bilayer thickness (0.1-100 nm), and TiO2 content (0%-100%). Al2O3 was grown from Me3Al and H2O, and TiO2 from TiCl4 and H2O. According to wafer curvature measurements, Al2O3/TiO2 nanolaminates were under tensile stress; bilayer thickness and growth temperature were the major parameters affecting the stress; the residual stress decreased with increasing bilayer thickness and ALD temperature. Hardness increased with increasing ALD temperature and decreased with increasing TiO2 fraction. Contact modulus remained approximately stable. The adhesion of the nanolaminate film was good on silicon.

AB - Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110-300 °C), film thickness (20-300 nm), bilayer thickness (0.1-100 nm), and TiO2 content (0%-100%). Al2O3 was grown from Me3Al and H2O, and TiO2 from TiCl4 and H2O. According to wafer curvature measurements, Al2O3/TiO2 nanolaminates were under tensile stress; bilayer thickness and growth temperature were the major parameters affecting the stress; the residual stress decreased with increasing bilayer thickness and ALD temperature. Hardness increased with increasing ALD temperature and decreased with increasing TiO2 fraction. Contact modulus remained approximately stable. The adhesion of the nanolaminate film was good on silicon.

UR - http://www.scopus.com/inward/record.url?scp=84994494268&partnerID=8YFLogxK

U2 - 10.1116/1.4966198

DO - 10.1116/1.4966198

M3 - Article

VL - 35

SP - 1

EP - 13

JO - JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A

JF - JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A

SN - 0734-2101

IS - 1

M1 - 01B105

ER -

ID: 9697122