ALTERNATIVE FOR THE QUANTUM INDUCTANCE MODEL IN DOUBLE-BARRIER RESONANT-TUNNELING

H. J. M. F. Noteborn, H. P. Joosten, Kimmo Kaski, D. Lenstra

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

1 Sitaatiot (Scopus)

Abstrakti

A theoretical justification for the phenomenological equivalent circuit approach in Double-Barrier Resonant Tunneling (DBRT) is given. Starting from the combined Schrödinger and Poisson equations for the static behaviour of the DBRT diode, we arrive through a small signal analysis at a model for the dynamics. This model corresponds to an equivalent circuit consisting of two linked RC-sections. The simple equivalent circuits in which the DBRT structure is represented by a capacitor with parallel resistor, as well as more complicated circuits including a quantum inductance can all be considered special cases of our model. Furthermore, by studying the regions of stability in the phase diagrams resulting from our model, the effect of a parallel capacitor on the stability is investigated. © 1993 Academic Press. All rights reserved.
AlkuperäiskieliEnglanti
Sivut153-157
JulkaisuSuperlattices and Microstructures
Vuosikerta13
Numero2
DOI - pysyväislinkit
TilaJulkaistu - 1993
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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