Advanced simulation of rram memory cells

Toufik Sadi; Oves Badami; Vihar Georgiev; Jie Ding; Asen Asenov

doi:10.1109/ASICON47005.2019.8983467

Advanced simulation of rram memory cells

Toufik Sadi, Oves Badami, Vihar Georgiev, Jie Ding, Asen Asenov

Neurotieteen ja lääketieteellisen tekniikan laitos

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference contribution › Scientific › vertaisarvioitu

Abstrakti

Resistive random-access memories (RRAMs) are overwhelmingly viewed as potential candidates for the next generation of non-volatile memory devices. Here, we discuss the advantages of the kinetic Monte Carlo (KMC) simulation framework for RRAMs. We use a robust KMC simulator to analyze transport in promising oxide structures. The simulator couples self-consistently charge transport and thermal effects in the three-dimensional (3D) space, allowing a realistic reconstruction of the conductive filaments responsible for switching. By presenting insightful results, we argue that using a 3D physical electro-thermal simulator is necessary for understanding RRAM operation and reliability.

Alkuperäiskieli	Englanti
Otsikko	Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019
Toimittajat	Fan Ye, Ting-Ao Tang
Kustantaja	IEEE Computer Society
Sivumäärä	4
ISBN (elektroninen)	9781728107356
DOI - pysyväislinkit	https://doi.org/10.1109/ASICON47005.2019.8983467
Tila	Julkaistu - 1 lokak. 2019
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisuussa
Tapahtuma	IEEE International Conference on Advanced Semiconductor Integrated Circuits - Chongqing, Kiina Kesto: 29 lokak. 2019 → 1 marrask. 2019 Konferenssinumero: 13

Julkaisusarja

Nimi	Proceedings of International Conference on ASIC
ISSN (painettu)	2162-7541
ISSN (elektroninen)	2162-755X

Conference

Conference	IEEE International Conference on Advanced Semiconductor Integrated Circuits
Lyhennettä	ASICON
Maa/Alue	Kiina
Kaupunki	Chongqing
Ajanjakso	29/10/2019 → 01/11/2019

Pääsy asiakirjaan

10.1109/ASICON47005.2019.8983467

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@inproceedings{86423d36854c4b1b82b2bff8eb48c2a6,

title = "Advanced simulation of rram memory cells",

abstract = "Resistive random-access memories (RRAMs) are overwhelmingly viewed as potential candidates for the next generation of non-volatile memory devices. Here, we discuss the advantages of the kinetic Monte Carlo (KMC) simulation framework for RRAMs. We use a robust KMC simulator to analyze transport in promising oxide structures. The simulator couples self-consistently charge transport and thermal effects in the three-dimensional (3D) space, allowing a realistic reconstruction of the conductive filaments responsible for switching. By presenting insightful results, we argue that using a 3D physical electro-thermal simulator is necessary for understanding RRAM operation and reliability.",

keywords = "Charge transport, Electron-ion interactions, Kinetic Monte Carlo (KMC), Multi-scale modelling, Resistive random-access memories (RRAMs), Self-heating",

author = "Toufik Sadi and Oves Badami and Vihar Georgiev and Jie Ding and Asen Asenov",

year = "2019",

month = oct,

day = "1",

doi = "10.1109/ASICON47005.2019.8983467",

language = "English",

series = "Proceedings of International Conference on ASIC",

publisher = "IEEE Computer Society",

editor = "Fan Ye and Ting-Ao Tang",

booktitle = "Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019",

address = "United States",

note = "IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON ; Conference date: 29-10-2019 Through 01-11-2019",

}

Sadi, T, Badami, O, Georgiev, V, Ding, J & Asenov, A 2019, Advanced simulation of rram memory cells. julkaisussa F Ye & T-A Tang (toim), Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019., 8983467, Proceedings of International Conference on ASIC, IEEE Computer Society, IEEE International Conference on Advanced Semiconductor Integrated Circuits, Chongqing, Kiina, 29/10/2019. https://doi.org/10.1109/ASICON47005.2019.8983467

Advanced simulation of rram memory cells. / Sadi, Toufik; Badami, Oves; Georgiev, Vihar et al.

Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019. toim. / Fan Ye; Ting-Ao Tang. IEEE Computer Society, 2019. 8983467 (Proceedings of International Conference on ASIC).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference contribution › Scientific › vertaisarvioitu

TY - GEN

T1 - Advanced simulation of rram memory cells

AU - Sadi, Toufik

AU - Badami, Oves

AU - Georgiev, Vihar

AU - Ding, Jie

AU - Asenov, Asen

N1 - Conference code: 13

PY - 2019/10/1

Y1 - 2019/10/1

N2 - Resistive random-access memories (RRAMs) are overwhelmingly viewed as potential candidates for the next generation of non-volatile memory devices. Here, we discuss the advantages of the kinetic Monte Carlo (KMC) simulation framework for RRAMs. We use a robust KMC simulator to analyze transport in promising oxide structures. The simulator couples self-consistently charge transport and thermal effects in the three-dimensional (3D) space, allowing a realistic reconstruction of the conductive filaments responsible for switching. By presenting insightful results, we argue that using a 3D physical electro-thermal simulator is necessary for understanding RRAM operation and reliability.

AB - Resistive random-access memories (RRAMs) are overwhelmingly viewed as potential candidates for the next generation of non-volatile memory devices. Here, we discuss the advantages of the kinetic Monte Carlo (KMC) simulation framework for RRAMs. We use a robust KMC simulator to analyze transport in promising oxide structures. The simulator couples self-consistently charge transport and thermal effects in the three-dimensional (3D) space, allowing a realistic reconstruction of the conductive filaments responsible for switching. By presenting insightful results, we argue that using a 3D physical electro-thermal simulator is necessary for understanding RRAM operation and reliability.

KW - Charge transport

KW - Electron-ion interactions

KW - Kinetic Monte Carlo (KMC)

KW - Multi-scale modelling

KW - Resistive random-access memories (RRAMs)

KW - Self-heating

UR - http://www.scopus.com/inward/record.url?scp=85082568576&partnerID=8YFLogxK

U2 - 10.1109/ASICON47005.2019.8983467

DO - 10.1109/ASICON47005.2019.8983467

M3 - Conference contribution

AN - SCOPUS:85082568576

T3 - Proceedings of International Conference on ASIC

BT - Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019

A2 - Ye, Fan

A2 - Tang, Ting-Ao

PB - IEEE Computer Society

T2 - IEEE International Conference on Advanced Semiconductor Integrated Circuits

Y2 - 29 October 2019 through 1 November 2019

ER -

Advanced simulation of rram memory cells

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